Dual N-Channel MOSFET Transistor & Diode, 45 A, 650 V, 10-Pin PG-HDSOP Infineon IPDD60R150G7XTMA1
Product Information
Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
C7 GOLD
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.15 O
Package Type:
DDPAK
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
45 A
Pin Count:
10
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 45 A, 650 V, 10-Pin PG-HDSOP Infineon IPDD60R150G7XTMA1. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 45 A, 650 V, 10-Pin PG-HDSOP Infineon IPDD60R150G7XTMA1.
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Yes. We ship IPDD60R150G7XTMA1 Internationally to many countries around the world.
This is Dual N-Channel MOSFET Transistor & Diode 45 A 650 V 10-Pin PG-HDSOP manufactured by Infineon. The manufacturer part number is IPDD60R150G7XTMA1. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product c7 gold, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.15 o maximum drain source resistance. The package is a sort of ddpak. It consists of 2 elements per chip. While 45 a of maximum continuous drain current. It contains 10 pins.
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