Dual N-Channel MOSFET Transistor & Diode, 6.8 A, 650 V, 3-Pin PG-TO 251 Infineon IPS60R1K0CEAKMA1

Infineon

Product Information

Forward Voltage Vf:
0.9V
Width:
2.4 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
13nC
Package Type:
TO-251
Maximum Continuous Drain Current Id:
6.8A
Product Type:
MOSFET & Diode
Maximum Drain Source Resistance Rds:
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
650V
Channel Type:
Type N
Length:
6.73mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
61W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
CoolMOS
Height:
6.22mm
Minimum Operating Temperature:
-40°C
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 6.8 A 650 V 3-Pin PG-TO 251 manufactured by Infineon. The manufacturer part number is IPS60R1K0CEAKMA1. Furthermore, the product is 2.4 mm wide. The product complies with automotive standard - no. The package is a sort of to-251. mosfet & diode is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150°c. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. It has a surface type mount . The product carries enhancement channel mode. The product coolmos, is a highly preferred choice for users. In addition, the height is 6.22mm. Whereas, the minimum operating temperature of the product is -40°c.

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Datasheet - IPS60R1K0CEAKMA1(Technical Reference)

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