Dual N-Channel MOSFET Transistor & Diode, 6.8 A, 650 V, 3-Pin PG-TO 251 Infineon IPS60R1K0CEAKMA1
Product Information
Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
CoolMOS
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
1 O
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
6.8 A
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 6.8 A, 650 V, 3-Pin PG-TO 251 Infineon IPS60R1K0CEAKMA1. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 6.8 A, 650 V, 3-Pin PG-TO 251 Infineon IPS60R1K0CEAKMA1.
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Yes. We ship IPS60R1K0CEAKMA1 Internationally to many countries around the world.
This is Dual N-Channel MOSFET Transistor & Diode 6.8 A 650 V 3-Pin PG-TO 251 manufactured by Infineon. The manufacturer part number is IPS60R1K0CEAKMA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 1 o maximum drain source resistance. The package is a sort of ipak (to-251). It consists of 2 elements per chip. While 6.8 a of maximum continuous drain current. It contains 3 pins.
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