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What are metal-oxide-semiconductor field-effect transistors (MOSFETs)?

MOSFETs are also referred to as MOSFET transistors. A MOSFET is a type of transistor that a capacitor controls. The "Field-Effect" refers to the fact that voltage controls them. Controlling the flow of current between the source and drain terminals is the purpose of a MOSFET. It is employed for switching or amplification of electrical signals and functions very similarly to a switch.

How do MOSFETs work?

The Source, Gate, and Drain pins are located on a MOSFET package. A current can flow from the drain to the source pins when a voltage is supplied between the gate and the source terminals. The resistance from the drain to the source will change when a different voltage is supplied to the gate. Resistance increases as applied voltage decreases. The resistance from the drain to the source will decrease as the voltage rises. Like ordinary MOSFETs, power MOSFETs are engineered to handle more power.

How to choose a MOSFET as a switch?

There are a few conditions to be observed while selecting the MOSFET as a switch, and those are as follows:

Utilize polarity in either the P or N channel.

A maximum rating of functions voltage and current measures.

Increased Rds ON, which means that control at the Drain to Source terminal when the medium is entirely open.

Increased operational frequency.

The packaging type is of To-220 and DPAck and many more.

What are depletion and enhancement modes?

Depletion and enhancement are the two operating modes of MOSFET transistors. MOSFETs with depletion operate like closed switches. When no current is applied, the current flows through. A negative voltage will stop the current flow if it is applied. Improved mode MOSFETs are more common than depletion mode MOSFETs and function similarly to a variable resistor. They are available in n-channel and p-channel varieties.

What is MOSFET Switch Efficiency?

The increased drain current value that a MOSFET is capable of is the key limitation when using the device as a switching device. This indicates that the key factor determining the MOSFET's ability to switch is RDS in the ON state. It is expressed as the difference between the voltage at the drain and the voltage at the source. Only when the transistor is in the ON state does it need to be computed.

New Items

New items

NTBG060N065SC1, ON Semiconductor

The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. Higher system reliability Ultra low gate charge High speed switching and low capacitance

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RCJ451N20TL, ROHM

The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 200 V drain-source voltage and 45 A drain current, taping packing type. Low on-resistance Fast switching speed Parallel use is easy Pb-free plating RoHs compliant 100 percent avalanche tested Drive circuits can be simple

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RX3G18BGNC16, ROHM

The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 40 V drain-source voltage and 180 A drain current, tube packing type. Low on-resistance RoHS compliant Pb-free plating 100 percent UIS tested

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SH8KA4TB1, ROHM

The ROHM is small surface mount package, N channel + N channel MOSFET which is suitable for switching and motor drive application with 30 V drain-source voltage and 9 A drain current. Low on-resistance Pb-free lead plating RoHS compliant Halogen free

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IRF40SC240ARMA1, Infineon

The Infineons latest 40 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications. It offers design flexibility, with Industry standard packaging. It is capable of providing immunity to false turn-on in noisy environments. It has 175°C operating temperature High current carrying capability

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IRFH9310TRPBF, Infineon

P-Channel Power MOSFET 30V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

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NTP6410ANG, onsemi

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

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IRFS7730TRLPBF, Infineon

StrongIRFET™ Power MOSFET, Infineon Infineon's StrongIRFET family is optimized for low R DS (on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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SQ2308CES-T1_GE3, Vishay

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IPB60R360P7ATMA1, Infineon

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency. It has rugged body diode Integrated RG reduces MOSFET oscillation sensitivity

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IRFP7530PBF, Infineon

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IPW60R040CFD7XKSA1, Infineon

The Infineon 600V Cool MOS™ CFD7 is Infineons latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS™ 7 series. Cool MOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations

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