Deliver to
United Kingdom
The Infineon ISC011N03L5SATMA1 is a robust low-voltage power MOSFET designed for high-efficiency switching in demanding UK applications. Supporting up to 100 A (at case temperature) and rated for 30 V V<sub>DS</sub>, this OptiMOS™ device features ultra‑low R<sub>DS(on)</sub> ≈ 0.9 mΩ (at 10 V gate drive), enabling minimal conduction losses. Encased in a compact PG‑TDSON‑8 surface-mount package, it handles power dissipation up to 96 W with ideal thermal management.
The ISC011N03L5SATMA1 stands out for its exceptional combination of current capacity, low resistance, and compact design. Its OptiMOS architecture ensures efficient energy use and reduced heat build-up, crucial for thermal-conscious UK PCB designs. The PG‑TDSON surface-mount package allows for easy integration in high-volume automated assemblies, while delivering industry-leading performance in tight power electronics layouts.
For more information please check the datasheets.
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