Infineon IPD95R1K2P7ATMA1

Infineon

Product Information

Maximum Drain Source Voltage:
950 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Channel Type:
N
Package Type:
TO-252
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
1899-12-31 06:00:00
Pin Count:
3
RoHs Compliant
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The Infineon IPD95R1K2P7ATMA1 is a high-voltage, high-efficiency N-channel CoolMOS P7 MOSFET tailored explicitly for UK power electronics engineers. Packaged in a robust through-hole TO‑252‑3 (DPAK) form, it supports an impressive 950 V drain–source voltage, 6 A continuous current, and dissipates up to 52 W at case temperature. With a low R_DS(on) of ~1.2 Ω at 10 V gate drive, 52 W thermal dissipation, and a wide operating range of –55 °C to +150 °C, it's ideal for demanding environments. Its fast switching (rise ~10 ns, fall ~12 ns) enhances performance in UK industrial drivers, renewable inverters, and SMPS systems.

Why Choose the Infineon N-channel MOSFET?

It leverages CoolMOS P7 superjunction technology, offering reduced switching and conduction losses, crucial for UK designs aiming at thermal efficiency and compact layouts. The through‑hole DPAK package simplifies assembly and enhances heat dissipation, delivering long-term reliability in power-critical applications.

Salient Features and Benefits of the Product

  • 950 V rating supports robust UK industrial and energy sectors.
  • ~1.2 Ω R_DS(on) at 10 V reduces loss and improves energy performance.
  • 52 W dissipation and wide temperature range (–55 °C to +150 °C) ensure resilience.
  • Rise/fall times of ~10 ns/12 ns elevate power conversion efficiency.
  • Perfect for UK manufacturing with strong thermal management and easy assembly.

Versatility in Applications

  • Switch-mode power supplies (SMPS) in industrial electronics
  • Renewable energy inverters (e.g. solar, wind power systems)
  • High-voltage industrial motor drives and converters
  • LED lighting and ballast electronics requiring efficient switching
  • General-purpose UK power infrastructure demanding robust MOSFET performance

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Datasheet - IPD95R1K2P7ATMA1(Technical Reference)

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