Products Found: 7780
Showing Results For: MOSFETs
MOSFETs
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ON Semiconductor
NTMFS4927NT1G, ON Semiconductor
8 In Stock
Check Stock & Lead Times Packaging Options
1500 +
£ 0.032
ON Semiconductor
NTJS3151PT1G, ON Semiconductor
6057 In Stock
Check Stock & Lead Times Packaging Options
3000 +
£ 0.049
ON Semiconductor
MVMBF0201NLT1G, ON Semiconductor
2998 In Stock
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50 +
£ 0.046
ON Semiconductor
NVF2955T1G, ON Semiconductor
1527 In Stock
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40 +
£ 0.22
IXYS
MKE38RK600DFELB, IXYS
104 In Stock
Check Stock & Lead Times Packaging Options
45 +
£ 17.47
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New Items
New items
DMN5L06DWK-7, DiodesZetex
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
New items
NTBG060N065SC1, ON Semiconductor
The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Higher system reliability
Ultra low gate charge
High speed switching and low capacitance
New items
New items
PMXB120EPEZ, Nexperia
P-channel MOSFETs, The perfect fit for your design when N-channels simply arent suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperias leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
30 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1
´
1.0
´
0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV HBM
Drain-source on-state resistance RDSon = 350 mΩ
New items
RSJ400N10TL, ROHM
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
4Ｖ-drive type
Nch Power MOSFET
Fast Switching Speed
Drive circuits can be simple
Parallel use is easy
Pb Free
New items
R6024KNX, ROHM
R6024KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
Low on-resistance.
Ultra fast switching speed.
Parallel use is easy.
Pb-free lead plating
New items
RCJ451N20TL, ROHM
The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 200 V drain-source voltage and 45 A drain current, taping packing type.
Low on-resistance
Fast switching speed
Parallel use is easy
Pb-free plating
RoHs compliant
100 percent avalanche tested
Drive circuits can be simple
New items
RX3G18BGNC16, ROHM
The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 40 V drain-source voltage and 180 A drain current, tube packing type.
Low on-resistance
RoHS compliant
Pb-free plating
100 percent UIS tested