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Products Found: 7746

Showing Results For: MOSFETs

MOSFETs

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IRF200P222, Infineon
IRF200P222, Infineon

Rates

25+
£ 6.15
50+
£ 5.84
125+
£ 5.60
Availability
72 In Stock
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RX3P10BBHC16, ROHM
RX3P10BBHC16, ROHM

Rates

1000+
£ 3.10
2000+
£ 3.02
Availability
998 In Stock
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RD3P03BBHTL1, ROHM
RD3P03BBHTL1, ROHM

Rates

2500+
£ 0.59
Availability
5020 In Stock
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IPP033N04NF2SAKMA1, Infineon
IPP033N04NF2SAKMA1, Infineon

Rates

1000+
£ 0.38
2000+
£ 0.35
3000+
£ 0.35
Availability
2005 In Stock
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IPP60R040S7XKSA1, Infineon
IPP60R040S7XKSA1, Infineon

Rates

500+
£ 4.18
Availability
1008 In Stock
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IPB65R660CFDAATMA1, Infineon
IPB65R660CFDAATMA1, Infineon

Rates

1000+
£ 1.03
Availability
2024 In Stock
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IPD40DP06NMATMA1, Infineon
IPD40DP06NMATMA1, Infineon

Rates

2500+
£ 0.28
Availability
5028 In Stock
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IPP65R060CFD7XKSA1, Infineon
IPP65R060CFD7XKSA1, Infineon

Rates

50+
£ 3.57
100+
£ 3.32
Availability
134 In Stock
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IPT022N10NF2SATMA1, Infineon
IPT022N10NF2SATMA1, Infineon

Rates

1800+
£ 2.15
Availability
3612 In Stock
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IPB016N08NF2SATMA1, Infineon
IPB016N08NF2SATMA1, Infineon

Rates

800+
£ 1.65
Availability
1689 In Stock
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SIHH085N60EF-T1GE3, Vishay
SIHH085N60EF-T1GE3, Vishay

Rates

1+
£ 5.42
50+
£ 4.88
100+
£ 3.99
Availability
63 In Stock
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SIHK185N60EF-T1GE3, Vishay
SIHK185N60EF-T1GE3, Vishay

Rates

2000+
£ 2.01
Availability
4070 In Stock
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SiRA54ADP-T1-RE3, Vishay
SiRA54ADP-T1-RE3, Vishay

Rates

3000+
£ 0.65
Availability
6080 In Stock
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SIS184LDN-T1-GE3, Vishay
SIS184LDN-T1-GE3, Vishay

Rates

3000+
£ 0.64
Availability
6082 In Stock
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RSQ035N06HZGTR, ROHM
RSQ035N06HZGTR, ROHM

Rates

3000+
£ 0.25
Availability
6042 In Stock
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RSR020N06HZGTL, ROHM
RSR020N06HZGTL, ROHM

Rates

25+
£ 0.37
50+
£ 0.36
100+
£ 0.28
Availability
2973 In Stock
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RTR025N03HZGTL, ROHM
RTR025N03HZGTL, ROHM

Rates

3000+
£ 0.17
Availability
6059 In Stock
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NP50P06KDG-E1-AY, Renesas Electronics
NP50P06KDG-E1-AY, Renesas Electronics

Rates

800+
£ 1.33
2400+
£ 1.23
4800+
£ 1.20
Availability
1699 In Stock
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IPTC054N15NM5ATMA1, Infineon
IPTC054N15NM5ATMA1, Infineon

Rates

1800+
£ 2.35
Availability
1798 In Stock
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RJK1056DPB-00#J5, Renesas Electronics
RJK1056DPB-00#J5, Renesas Electronics

Rates

2500+
£ 1.38
5000+
£ 1.32
10000+
£ 1.29
Availability
5055 In Stock
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RD3G03BBGTL1, ROHM
RD3G03BBGTL1, ROHM

Rates

2500+
£ 0.54
Availability
5061 In Stock
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IRF7451TRPBF, Infineon
IRF7451TRPBF, Infineon

Rates

4000+
£ 0.44
Availability
8085 In Stock
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BSC0503NSIATMA1, Infineon
BSC0503NSIATMA1, Infineon

Rates

5000+
£ 0.38
Availability
10027 In Stock
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BSC120N12LSGATMA1, Infineon
BSC120N12LSGATMA1, Infineon

Rates

5000+
£ 0.69
Availability
10031 In Stock
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BSZ084N08NS5ATMA1, Infineon
BSZ084N08NS5ATMA1, Infineon

Rates

5000+
£ 0.49
Availability
10040 In Stock
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New Items
New items
NTBG060N065SC1, ON Semiconductor

NTBG060N065SC1, ON Semiconductor

The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. Higher system reliability Ultra low gate charge High speed switching and low capacitance
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New items
RCJ451N20TL, ROHM

RCJ451N20TL, ROHM

The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 200 V drain-source voltage and 45 A drain current, taping packing type. Low on-resistance Fast switching speed Parallel use is easy Pb-free plating RoHs compliant 100 percent avalanche tested Drive circuits can be simple
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New items
RX3G18BGNC16, ROHM

RX3G18BGNC16, ROHM

The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 40 V drain-source voltage and 180 A drain current, tube packing type. Low on-resistance RoHS compliant Pb-free plating 100 percent UIS tested
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New items
SH8KA4TB1, ROHM

SH8KA4TB1, ROHM

The ROHM is small surface mount package, N channel + N channel MOSFET which is suitable for switching and motor drive application with 30 V drain-source voltage and 9 A drain current. Low on-resistance Pb-free lead plating RoHS compliant Halogen free
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New items
IRF40SC240ARMA1, Infineon

IRF40SC240ARMA1, Infineon

The Infineon’s latest 40 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications. It offers design flexibility, with Industry standard packaging. It is capable of providing immunity to false turn-on in noisy environments. It has 175°C operating temperature High current carrying capability
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New items
IRFH9310TRPBF, Infineon

IRFH9310TRPBF, Infineon

P-Channel Power MOSFET 30V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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New items
IPP60R160P6XKSA1, Infineon

IPP60R160P6XKSA1, Infineon

The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler. Easy to use/drive Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22) Very high commutation ruggedness
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New items
IRL40SC209, Infineon

IRL40SC209, Infineon

The Infineon N-chaneel Power MOSFET have 7 pin with the D2PAK package.The drain-source voltage (Vds) is 40V.The continuous drain current (Id) is 478 A.The operating temperature is ranges from -55 °C to 175 °C. Surface mount technology Power dissipation is 375 W Typical Applications: DC motors, battery management systems,inverters, and DC-DC converters
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New items
SIR4604DP-T1-GE3, Vishay

SIR4604DP-T1-GE3, Vishay

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal. TrenchFET Gen V power MOSFET Very low RDS - Qg figure-of-merit (FOM) Tuned for the lowest RDS - Qoss FOM 100 % Rg and UIS tested
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New items
SIZF5302DT-T1-RE3, Vishay

SIZF5302DT-T1-RE3, Vishay

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal. TrenchFET Gen V power MOSFET Symmetric dual N-channel Flip chip technology optimal thermal design High side and low side MOSFETs form optimized Combination for 50 % duty cycle Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency For high frequency swi
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New items
SQJQ186ER-T1_GE3, Vishay

SQJQ186ER-T1_GE3, Vishay

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages. TrenchFET Gen IV power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Thin 1.9 mm height
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New items
SQS160ELNW-T1_GE3, Vishay

SQS160ELNW-T1_GE3, Vishay

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages. TrenchFET Gen IV power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Wettable flank terminals Low thermal resistance with 0.75 mm profile
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FAQs
We offer free shipping for orders over £200 if delivery is in the UK. All other orders in the UK, shipping from £7.99 depending on the weight and measurement. Mainland Europe shipping charges start from £25. For all other countries shipping charges start from £50 for products like MOSFETs and all others.
You can email us directly at sales@enrgtech.co.uk or via our website for any queries regarding MOSFETs or any other product.
This depends on the MOSFETs individual product and information that can be found on our website.
Yes, we offer special discounts on orders above £200 for MOSFETs and all other products.
UK orders normally take between 2/3 working days. International orders normally take between 3/5 working days for all products including MOSFETs.
Yes. We keep updating our stock frequently and if a product like MOSFETs is not in stock then we will let you know.
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