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Infineon IMB SiC N-Channel MOSFET, 41 A, 650 V, 7-Pin PG-TO263-7 IMBG65R050M2HXTMA1

IMBG65R050M2HXTMA1 Infineon IMB SiC N-Channel MOSFET, 41 A, 650 V, 7-Pin PG-TO263-7
IMBG65R050M2HXTMA1 Infineon IMB SiC N-Channel MOSFET, 41 A, 650 V, 7-Pin PG-TO263-7
Infineon

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
172W
Maximum Drain Source Voltage Vds:
650V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
23 V
Series:
CoolSiC
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
22nC
Package Type:
PG-TO263-7
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
62mΩ
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
41A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Pin Count:
7
Mount Type:
Surface
RoHs Compliant
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This is IMB SiC N-Channel MOSFET 41 A 650 V 7-Pin PG-TO263-7 manufactured by Infineon. The manufacturer part number is IMBG65R050M2HXTMA1. The product complies with automotive standard - no. The product carries enhancement channel mode. The product coolsic, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of pg-to263-7. Whereas, the minimum operating temperature of the product is -55°c. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 175°c. It contains 7 pins. It has a surface type mount .

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Datasheet - IMBG65R050M2HXTMA1(Technical Reference)

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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IMB SiC N-Channel MOSFET, 41 A, 650 V, 7-Pin PG-TO263-7 IMBG65R050M2HXTMA1. You can also check on our website or by contacting our customer support team for further order details on Infineon IMB SiC N-Channel MOSFET, 41 A, 650 V, 7-Pin PG-TO263-7 IMBG65R050M2HXTMA1.
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