Infineon IPD N-Channel MOSFET, 18 A, 600 V, 3-Pin PG-TO252-3 IPD60R180CM8XTMA1

Infineon

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
127W
Maximum Drain Source Voltage Vds:
600V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
OptiMOS
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
17nC
Package Type:
PG-TO252-3
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
0.18Ω
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
18A
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Surface
RoHs Compliant
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This is IPD N-Channel MOSFET 18 A 600 V 3-Pin PG-TO252-3 manufactured by Infineon. The manufacturer part number is IPD60R180CM8XTMA1. The product complies with automotive standard - no. The product carries enhancement channel mode. The product optimos, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of pg-to252-3. Whereas, the minimum operating temperature of the product is -55°c. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150°c. It contains 3 pins. It has a surface type mount .

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Datasheet - IPD60R180CM8XTMA1(Technical Reference)

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