Infineon OptiMOS7 N-Channel MOSFET, 274 A, 80 V, 8-Pin PG-TDSON-8-53 IAUCN08S7N013ATMA1

Enrgtech Part No: ET28404318
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Manufacturer Part No:
IAUCN08S7N013ATMA1
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Manufacturer: Infineon

IAUCN08S7N013ATMA1 Infineon OptiMOS7 N-Channel MOSFET, 274 A, 80 V, 8-Pin PG-TDSON-8-53

Product Information

Maximum Drain Source Voltage:

80 V

Channel Mode:

Enhancement

Mounting Type:

Surface Mount

Series:

OptiMOS7

Channel Type:

Package Type:

PG-TDSON-8-53

Number of Elements per Chip:

Maximum Continuous Drain Current:

274 A

Pin Count:

Checking for live stock

The Infineon IAUCN08S7N013ATMA1 is a high-performance automotive-grade MOSFET engineered for demanding power applications. Designed in the efficient PG TDSON 8 53 surface-mount package, it delivers ultra-low on-resistance and impressive current handling in a compact footprint making it ideal for 48V DC-DC converters, motor drives, power supplies, and more. With rugged automotive qualification (AEC Q101) and a design that emphasises both reliability and thermal efficiency, this MOSFET stands out for professionals focused on efficiency, durability, and cutting-edge performance.

Why You Should Consider the Infineon OptiMOS7 IAUCN08S7N013ATMA1 MOSFET?

Choosing the IAUCN08S7N013ATMA1 gives you high-efficiency switching, industry-leading current capacity, and long-term reliability in harsh conditions. Key benefits include:

Extremely low R₍DS(on)₎ of just 1.3 mΩ at 10 V ensures minimal conduction losses and lowers heat generation.
Massive continuous current rating (up to 274 A) supports robust power applications while sustaining performance.
AEC Q101 automotive qualification assures resilience in temperature extremes (–55 °C to 175 °C) and high reliability in vehicle environments.
Compact PG-TDSON-8-53 (OptiMOS 7 family) form factor enables space-saving designs without sacrificing capability.

Product Special Features:

N-Channel OptiMOS 7 MOSFET with ultra-low on-resistance (R₍DS(on)₎ = 1.3 mΩ @ 10 V)
High continuous drain current: up to 274 A
80 V drain-to-source voltage (V₍DSS₎) rating
Gate threshold voltage max of 3.2 V @ 130 µA
Compact surface-mount PG-TDSON-8-53 package (8-pin)
Automotive-grade AEC-Q101 qualification for enhanced durability
Wide operating temperature: –55 °C to +175 °C
Low input capacitance (Ciss ≈ 8402 pF @ 40 V) and gate charge (Qg ≈ 116 nC @ 10 V) for efficient switching.

Datasheet - IAUCN08S7N013ATMA1(Technical Reference)

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