SiC N-Channel MOSFET, 610 A, 40 V, 9-Pin PG-TTFN-9 Infineon IQD005N04NM6CGATMA1

Infineon

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
333W
Maximum Drain Source Voltage Vds:
40V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
OptiMOS
Forward Voltage Vf:
1V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
129nC
Package Type:
PG-TTFN-9
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
0.47mΩ
Standards/Approvals:
RoHS, IEC61249-2-21, JEDEC
Maximum Continuous Drain Current Id:
610A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Pin Count:
9
Mount Type:
Surface
RoHs Compliant
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This is SiC N-Channel MOSFET 610 A 40 V 9-Pin PG-TTFN-9 manufactured by Infineon. The manufacturer part number is IQD005N04NM6CGATMA1. The product complies with automotive standard - no. The product carries enhancement channel mode. The product optimos, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of pg-ttfn-9. Whereas, the minimum operating temperature of the product is -55°c. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 175°c. It contains 9 pins. It has a surface type mount .

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Datasheet - IQD005N04NM6CGATMA1(Technical Reference)

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