SiC N-Channel MOSFET, 99 A, 80 V, 8-Pin PG-WHSON-8 Infineon IQE046N08LM5SCATMA1

Infineon

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
100W
Maximum Drain Source Voltage Vds:
80V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
OptiMOS
Forward Voltage Vf:
1V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
19nC
Package Type:
PG-WHSON-8
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
4.6mΩ
Standards/Approvals:
IEC61249-2-21, JEDEC, RoHS
Maximum Continuous Drain Current Id:
99A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Pin Count:
8
Mount Type:
Surface
RoHs Compliant
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This is SiC N-Channel MOSFET 99 A 80 V 8-Pin PG-WHSON-8 manufactured by Infineon. The manufacturer part number is IQE046N08LM5SCATMA1. The product complies with automotive standard - no. The product carries enhancement channel mode. The product optimos, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of pg-whson-8. Whereas, the minimum operating temperature of the product is -55°c. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 175°c. It contains 8 pins. It has a surface type mount .

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Datasheet - IQE046N08LM5SCATMA1(Technical Reference)

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