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SiC N-Channel MOSFET, 331 A, 120 V, 8-Pin PG-HSOF-8 Infineon IPT017N12NM6ATMA1

IPT017N12NM6ATMA1 SiC N-Channel MOSFET, 331 A, 120 V, 8-Pin PG-HSOF-8 Infineon
IPT017N12NM6ATMA1 SiC N-Channel MOSFET, 331 A, 120 V, 8-Pin PG-HSOF-8 Infineon
Infineon

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
395W
Maximum Drain Source Voltage Vds:
120V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±20 V
Series:
OptiMOS
Channel Type:
Type N
Package Type:
PG-HSOF-8
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
1.7mΩ
Standards/Approvals:
RoHS Compliant
Maximum Continuous Drain Current Id:
331A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Pin Count:
8
Mount Type:
Surface
RoHs Compliant
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This is SiC N-Channel MOSFET 331 A 120 V 8-Pin PG-HSOF-8 manufactured by Infineon. The manufacturer part number is IPT017N12NM6ATMA1. The product complies with automotive standard - no. The product carries enhancement channel mode. The product optimos, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of pg-hsof-8. Whereas, the minimum operating temperature of the product is -55°c. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 175°c. It contains 8 pins. It has a surface type mount .

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Datasheet - IPT017N12NM6ATMA1(Technical Reference)

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You can order Infineon brand products with IPT017N12NM6ATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of SiC N-Channel MOSFET, 331 A, 120 V, 8-Pin PG-HSOF-8 Infineon IPT017N12NM6ATMA1. You can also check on our website or by contacting our customer support team for further order details on SiC N-Channel MOSFET, 331 A, 120 V, 8-Pin PG-HSOF-8 Infineon IPT017N12NM6ATMA1.
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