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SiC N-Channel MOSFET, 205 A, 100 V, 3-Pin PG-TO220-3 Infineon IPP018N10N5XKSA1

IPP018N10N5XKSA1 SiC N-Channel MOSFET, 205 A, 100 V, 3-Pin PG-TO220-3 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
100 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
OptiMOS
Channel Type:
N
Package Type:
PG-TO220-3
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
205 A
Transistor Material:
SiC
Pin Count:
3
RoHs Compliant
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This is SiC N-Channel MOSFET 205 A 100 V 3-Pin PG-TO220-3 manufactured by Infineon. The manufacturer part number is IPP018N10N5XKSA1. It has a maximum of 100 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product optimos, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of pg-to220-3. It consists of 1 elements per chip. While 205 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins.

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Datasheet - IPP018N10N5XKSA1(Technical Reference)

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You can order Infineon brand products with IPP018N10N5XKSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of SiC N-Channel MOSFET, 205 A, 100 V, 3-Pin PG-TO220-3 Infineon IPP018N10N5XKSA1. You can also check on our website or by contacting our customer support team for further order details on SiC N-Channel MOSFET, 205 A, 100 V, 3-Pin PG-TO220-3 Infineon IPP018N10N5XKSA1.
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