Silicon N-Channel MOSFET, 22 A, 600 V, 3-Pin D2PAK Vishay SIHB150N60E-GE3

Vishay

Product Information

Maximum Drain Source Voltage:
600 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Package Type:
TO-263
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
22 A
Transistor Material:
Silicon
Pin Count:
3
RoHs Compliant
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This is Silicon N-Channel MOSFET 22 A 600 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SIHB150N60E-GE3. It has a maximum of 600 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of to-263. It consists of 1 elements per chip. While 22 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.

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Datasheet - SIHB150N60E-GE3(Technical Reference)

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