SiC N-Channel MOSFET, 40 A, 1200 V, 4-Pin HiP247-4 STMicroelectronics SCT040W120G3-4

STMicroelectronics

Product Information

Automotive Standard:
AEC-Q101
Maximum Power Dissipation Pd:
312W
Maximum Drain Source Voltage Vds:
1200V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
-10 to 22 V
Series:
SCT
Forward Voltage Vf:
1200V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
56nC
Package Type:
Hip-247-4
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
40mΩ
Standards/Approvals:
RoHS, ECOPACK2
Maximum Continuous Drain Current Id:
40A
Product Type:
MOSFET
Maximum Operating Temperature:
200°C
Pin Count:
4
Mount Type:
Surface
RoHs Compliant
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This is SiC N-Channel MOSFET 40 A 1200 V 4-Pin HiP247-4 manufactured by STMicroelectronics. The manufacturer part number is SCT040W120G3-4. The product complies with automotive standard - aec-q101. The product carries enhancement channel mode. The product sct, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of hip-247-4. Whereas, the minimum operating temperature of the product is -55°c. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 200°c. It contains 4 pins. It has a surface type mount .

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Datasheet - SCT040W120G3-4(Technical Reference)

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