SiC N-Channel MOSFET, 60 A, 650 V, 7-Pin H2PAK-7 STMicroelectronics SCT027H65G3AG

STMicroelectronics

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
SCT
Channel Type:
N
Package Type:
H2PAK-7
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
60 A
Transistor Material:
SiC
Pin Count:
7
RoHs Compliant
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This is SiC N-Channel MOSFET 60 A 650 V 7-Pin H2PAK-7 manufactured by STMicroelectronics. The manufacturer part number is SCT027H65G3AG. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product sct, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of h2pak-7. It consists of 1 elements per chip. While 60 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 7 pins.

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Datasheet - SCT027H65G3AG(Technical Reference)

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