SiC N-Channel MOSFET, 55 A, 1200 V, 7-Pin H2PAK-7 STMicroelectronics SCT025H120G3AG

STMicroelectronics

Product Information

Forward Voltage Vf:
2.7V
Width:
10.4 mm
Automotive Standard:
AEC-Q101
Typical Gate Charge Qg @ Vgs:
73nC
Package Type:
H2PAK-7
Maximum Continuous Drain Current Id:
55A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
27mΩ
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
1200V
Channel Type:
Type N
Length:
15.25mm
Standards/Approvals:
AEC-Q101, RoHS
Pin Count:
7
Mount Type:
Surface
Maximum Power Dissipation Pd:
375W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
22 V
Series:
SCT025H120G3AG
Height:
4.8mm
Minimum Operating Temperature:
-55°C
RoHs Compliant
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This is SiC N-Channel MOSFET 55 A 1200 V 7-Pin H2PAK-7 manufactured by STMicroelectronics. The manufacturer part number is SCT025H120G3AG. Furthermore, the product is 10.4 mm wide. The product complies with automotive standard - aec-q101. The package is a sort of h2pak-7. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 175°c. The product is available in [Cannel Type] channel. Its accurate length is 15.25mm. It contains 7 pins. It has a surface type mount . The product carries enhancement channel mode. The product sct025h120g3ag, is a highly preferred choice for users. In addition, the height is 4.8mm. Whereas, the minimum operating temperature of the product is -55°c.

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Datasheet - SCT025H120G3AG(Technical Reference)

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