Silicon N-Channel MOSFET, 192 A, 30 V, 8-Pin 1212-8SLW Vishay SQS120ELNW-T1_GE3

Vishay

Product Information

Automotive Standard:
AEC-Q101
Maximum Power Dissipation Pd:
119W
Maximum Drain Source Voltage Vds:
30V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±20 V
Series:
SQS
Forward Voltage Vf:
0.82V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
88nC
Length:
3.3mm
Package Type:
1212-8SLW
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
0.0033Ω
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
192A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Pin Count:
8
Mount Type:
Surface
RoHs Compliant
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This is Silicon N-Channel MOSFET 192 A 30 V 8-Pin 1212-8SLW manufactured by Vishay. The manufacturer part number is SQS120ELNW-T1_GE3. The product complies with automotive standard - aec-q101. The product carries enhancement channel mode. The product sqs, is a highly preferred choice for users. The product is available in [Cannel Type] channel. Its accurate length is 3.3mm. The package is a sort of 1212-8slw. Whereas, the minimum operating temperature of the product is -55°c. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 175°c. It contains 8 pins. It has a surface type mount .

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Datasheet - SQS120ELNW-T1_GE3(Technical Reference)

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