Infineon IPD900P06NMATMA1

Enrgtech Part No: ET26071025
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Manufacturer Part No:
IPD900P06NMATMA1
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Manufacturer: Infineon

Product Information

Maximum Drain Source Voltage:

-60 V

Mounting Type:

Through Hole

Channel Mode:

Enhancement

Channel Type:

Package Type:

TO-252

Number of Elements per Chip:

Maximum Continuous Drain Current:

-16.4 A

Pin Count:

Checking for live stock

The Infineon IPD900P06NMATMA1 P Channel MOSFET is a high performance, surface mount device in a compact TO 252 (DPAK) package. With a robust –60 V drain source rating, –16.4 A continuous current capacity, and ultra-low on resistance, this OptiMOS™ device delivers exceptional efficiency for power critical designs.

Why Is the IPD900P06NMATMA1 MOSFET the Right Choice?

Choosing the IPD900P06NMATMA1 means opting for reliable, efficient, and high density power switching. It excels in applications demanding low RDS(on), high thermal tolerance (up to 175 °C junction), and fast switching. Whether it's reverse polarity protection, battery management, or DC–DC conversion, this MOSFET simplifies design complexity while delivering consistent performance—saving board space and easing layout constraints.

Product Core Highlights – Features & Benefits

Extremely low on state resistance (~0.075 0.09 Ω) at VGS=10 V, minimising power loss and heat generation
Robust –60 V drain source voltage with –16.4 A continuous current at case temperature, providing ample safety margin for demanding loads
High maximum power dissipation (63 W at Tc), enabling compact design in high thermal environments
Tough thermal performance: junction rating up to 175 °C and low thermal resistance (RthJC ~2.4 °C/W) for reliable operation under stress
Fast switching capability with low gate charge (~27 nC) and short switching delays (rise/fall times in single-digit nanoseconds), ideal for high-frequency converters
Low gate threshold voltage (–3 to –4 V), ensuring clear turn-on behaviour and stable gating
Compact, surface-mount TO 252/DPAK package reduces board footprint and simplifies manufacturing in automated workflows
P Channel configuration enables simplified high-side switching and reverse polarity protection, reducing component count in battery-powered applications.

Datasheet - IPD900P06NMATMA1(Technical Reference)

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