Dual Silicon N-Channel MOSFET, 24 A, 650 V, 8-Pin PowerPAK 10 x 12 Vishay SIHK105N60E-T1-GE3

Vishay

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
132W
Maximum Drain Source Voltage Vds:
650V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±30 V
Series:
SIHK
Forward Voltage Vf:
1.2V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
53nC
Length:
9.9mm
Package Type:
PowerPAK 10 x 12
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
0.1Ω
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
24A
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Pin Count:
8
Mount Type:
PCB
RoHs Compliant
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This is Dual Silicon N-Channel MOSFET 24 A 650 V 8-Pin PowerPAK 10 x 12 manufactured by Vishay. The manufacturer part number is SIHK105N60E-T1-GE3. The product complies with automotive standard - no. The product carries enhancement channel mode. The product sihk, is a highly preferred choice for users. The product is available in [Cannel Type] channel. Its accurate length is 9.9mm. The package is a sort of powerpak 10 x 12. Whereas, the minimum operating temperature of the product is -55°c. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150°c. It contains 8 pins. It has a pcb type mount .

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Datasheet - SIHK105N60E-T1-GE3(Technical Reference)

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