Dual Silicon N-Channel MOSFET, 34 A, 650 V, 3-Pin D2PAK Vishay SIHB085N60EF-GE3

Vishay

Product Information

Maximum Drain Source Voltage:
650 V
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Transistor Material:
Silicon
Package Type:
TO-263
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
34 A
Channel Type:
N
Pin Count:
3
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This is Dual Silicon N-Channel MOSFET 34 A 650 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SIHB085N60EF-GE3. It has a maximum of 650 v drain source voltage. The product carries enhancement channel mode. The product is available in surface mount configuration. The transistor is manufactured from highly durable silicon material. The package is a sort of to-263. It consists of 2 elements per chip. While 34 a of maximum continuous drain current. The product is available in [Cannel Type] channel. It contains 3 pins.

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Datasheet - SIHB085N60EF-GE3(Technical Reference)

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