Dual Silicon N-Channel MOSFET, 227 A, 60 V, 8-Pin PowerPAK SO-8DC Vishay SIDR626EP-T1-RE3

Vishay

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
150W
Maximum Drain Source Voltage Vds:
60V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±20 V
Series:
SIDR
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
102nC
Length:
5.15mm
Package Type:
PowerPAK SO-8DC
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
0.00174Ω
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
227A
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Pin Count:
8
Mount Type:
Surface
RoHs Compliant
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This is Dual Silicon N-Channel MOSFET 227 A 60 V 8-Pin PowerPAK SO-8DC manufactured by Vishay. The manufacturer part number is SIDR626EP-T1-RE3. The product complies with automotive standard - no. The product carries enhancement channel mode. The product sidr, is a highly preferred choice for users. The product is available in [Cannel Type] channel. Its accurate length is 5.15mm. The package is a sort of powerpak so-8dc. Whereas, the minimum operating temperature of the product is -55°c. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150°c. It contains 8 pins. It has a surface type mount .

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Datasheet - SIDR626EP-T1-RE3(Technical Reference)

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