Dual Silicon P-Channel MOSFET, 19 A, 55 V, 3-Pin D2PAK Infineon IRF9Z34NSTRLPBF

IRF9Z34NSTRLPBF Dual Silicon P-Channel MOSFET, 19 A, 55 V, 3-Pin D2PAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
55 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
HEXFET
Channel Type:
P
Package Type:
D2PAK
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
19 A
Transistor Material:
Silicon
Pin Count:
3
RoHs Compliant
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This is Dual Silicon P-Channel MOSFET 19 A 55 V 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRF9Z34NSTRLPBF. It has a maximum of 55 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of d2pak. It consists of 2 elements per chip. While 19 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.

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Datasheet - IRF9Z34NSTRLPBF(Technical Reference)

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You will get a confirmation email regarding your order of Dual Silicon P-Channel MOSFET, 19 A, 55 V, 3-Pin D2PAK Infineon IRF9Z34NSTRLPBF. You can also check on our website or by contacting our customer support team for further order details on Dual Silicon P-Channel MOSFET, 19 A, 55 V, 3-Pin D2PAK Infineon IRF9Z34NSTRLPBF.
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