Dual SiC N-Channel MOSFET, 302 A, 40 V, 7-Pin PG-TO263-7 Infineon IPF009N04NF2SATMA1

IPF009N04NF2SATMA1 Dual SiC N-Channel MOSFET, 302 A, 40 V, 7-Pin PG-TO263-7 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Package Type:
PG-TO263-7
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
302 A
Transistor Material:
SiC
Pin Count:
7
RoHs Compliant
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This is Dual SiC N-Channel MOSFET 302 A 40 V 7-Pin PG-TO263-7 manufactured by Infineon. The manufacturer part number is IPF009N04NF2SATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of pg-to263-7. It consists of 2 elements per chip. While 302 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 7 pins.

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Datasheet - IPF009N04NF2SATMA1(Technical Reference)

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