Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD029N04NF2SATMA1

IPD029N04NF2SATMA1 Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Package Type:
PG-TO252-3
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
131 A
Transistor Material:
SiC
Pin Count:
3
RoHs Compliant
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This is Dual SiC N-Channel MOSFET 131 A 40 V 3-Pin PG-TO252-3 manufactured by Infineon. The manufacturer part number is IPD029N04NF2SATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of pg-to252-3. It consists of 2 elements per chip. While 131 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins.

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Datasheet - IPD029N04NF2SATMA1(Technical Reference)

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