Dual SiC N-Channel MOSFET, 195 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB015N06NF2SATMA1

IPB015N06NF2SATMA1 Dual SiC N-Channel MOSFET, 195 A, 60 V, 3-Pin PG-TO263-3 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Package Type:
PG-TO263-3
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
195 A
Transistor Material:
SiC
Pin Count:
3
RoHs Compliant
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This is Dual SiC N-Channel MOSFET 195 A 60 V 3-Pin PG-TO263-3 manufactured by Infineon. The manufacturer part number is IPB015N06NF2SATMA1. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of pg-to263-3. It consists of 2 elements per chip. While 195 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins.

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Datasheet - IPB015N06NF2SATMA1(Technical Reference)

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