Infineon IGB20N65S5ATMA1
Product Information
Mounting Type:
Through Hole
Maximum Power Dissipation:
125 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
20 A
Maximum Gate Emitter Voltage:
±20 V, ±30V
Package Type:
TO-263
Pin Count:
3
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FAQs
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You can order Infineon brand products with IGB20N65S5ATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IGB20N65S5ATMA1. You can also check on our website or by contacting our customer support team for further order details on Infineon IGB20N65S5ATMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET26085977 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET26085977.
Yes. We ship IGB20N65S5ATMA1 Internationally to many countries around the world.
This is manufactured by Infineon. The manufacturer part number is IGB20N65S5ATMA1. The product is available in through hole configuration. Provides up to 125 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 20 a continuous collector current . It offers a maximum ±20 v, ±30v gate emitter voltage . The package is a sort of to-263. It contains 3 pins.
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