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SRAM Of Upgraded Versions Available Online

Difference between SRAM and DRAM

Since this memory practices high-capacity storage and is integrated into the embedded system, Static Random Access Memory differs from DRAM (dynamic RAM, which stores bits in cells made up of a capacitor and a transistor) in that it does not require frequent refreshing, whereas dynamic will lose data if not. Static Random Access Memory is also more expensive and speedier than DRAM.

Unmatched Benefits of Buying Our Best-in-Class SRAMs

Access Transistors such as MAL and MAR provide access to preserved data for reading and writing operations.

Three operational stages are carried out in memory names hold, read, and write.

Bistable (cross-coupled) INVs for storage.

Word line, WL, controls access – WL=0 (hold operation), WL=1 (read/write operation).

Reliable chip for long data lifetime.

Data is held statically—semiconductor memory is being used to preserve the data, regardless of refreshing the data after each read data operation until the power is cut off to the memory.

What are the Typical Applications of SRAM?

They are widely used in various environments with a multitude of devices, such as:

Electronics

Routers

Workstations

LCD Screens and Printers

Microprocessors

Computers

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CY62137FV30LL-45BVXI, Cypress Semiconductor

Asynchronous Static RAM Memory, Cypress Semiconductor SRAM (Static Random Access Memory)

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RMLV1616AGSA-5S2#AA0, Renesas Electronics

Low Power SRAM, RMLV Series, Renesas Electronics The RMLV Series of high performance advanced static RAMs has realized higher density, low current consumption, and offers low power standby power dissipation. Single 2.7V to 3.6V power supply Access time: 45ns (max.) Equal access and cycle times Common data input and output with three state output All inputs and outputs are TTL compatible Suitable for battery backup operation SRAM (Static Random Access Memory)

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DS1225AB-85+, Maxim

Static RAM, Maxim Integrated SRAM (Static Random Access Memory)

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70V25L15PFG, Renesas Electronics

The Renesas Electronics 70V25 series high-speed 8K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or wider memory system applications. It has 100 lead count and has TQFP package type. The SRAM has C temperature grade. Separate upper-byte and lower-byte control for multiplexed bus compatibility 70V25 easily expands data bus width to 32 bits or more BUSY and Interrupt Flag On-chip port arbitration logic

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71V416L10PHG, Renesas Electronics

The Renesas Electronics 71V416 series 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. It has 44 lead count and has TSOP package type. The SRAM has C temperature grade. JEDEC Centre Power / GND pinout for reduced noise. Equal access and cycle times- Commercial and Industrial: 10/12/15ns One Chip Select plus one Output Enable pin Bidirectional data inputs and outputs directly LVTTL-compatible

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71V416S10PHGI, Renesas Electronics

The Renesas Electronics 71V416 series 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. It has 44 lead count and has TSOP package type. The SRAM has I temperature grade. JEDEC Centre Power / GND pinout for reduced noise. Equal access and cycle times- Commercial and Industrial: 10/12/15ns One Chip Select plus one Output Enable pin Bidirectional data inputs and outputs directly LVTTL-compatible

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AS6C6416-55TIN, Alliance Memory

The Alliance Memory AS6C6416 is a 67,108,864-bit low power CMOS static random access memory organized as 4,194,304 words by 16 bits or 8,388,608 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. Fully static operation Tri-state output

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71024S12TYGI, Renesas Electronics

The Renesas Electronics 71024 5V CMOS SRAM is organized as 128K x 8. All bidirectional inputs and outputs of the 71024 are TTL-compatible, and operation is from a single 5V supply. Fully static asynchronous circuitry is used and no clocks or refreshes are required for operation. Commercial (0C to +70C), Industrial (–40C to +85C) Bidirectional inputs and outputs directly TTL-compatible Low power consumption via chip deselect Available in 300 and 400 mil plastic SOJ packages

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AS6C4008-55TIN, Alliance Memory

Static RAM, Alliance Memory SRAM (Static Random Access Memory)

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IS61C5128AS-25QLI, ISSI

Static RAM, ISSI The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asynchronous SRAM, 5V low power types asynchronous SRAMs, ultra-low power CMOS Static RAM and PowerSaver TM lower power asynchronous SRAMs. The ISSI SRAM devices come in a variety of voltages, memory size and different organisations. They are suitable in applications such as CPU cache memory, embedded processors, hard drive, and switches to industrial electronics. Power supply: 1.8V/3.3V/5V Packages available: BGA, SOJ, SOP, sTSOP, TSOP Configuration choice available: x8 and x16 ECC feature available for High Speed Asynchronous SRAMs SRAM (Static Random Access Memory)

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47C16-I/P, Microchip

The Microchip Technology Inc 47C04 EERAM is a 4Kbit SRAM with EEPROM Backup. The I2C EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External Battery to Retain Data. The device is organized as 512 x 8 bits and utilizes the I2C serial interface. The 47C04 provides infinite read and write cycles to the SRAM while the EEPROM cells provide high endurance non-volatile storage of Data. With an external capacitor, SRAM data is automatically transferred to the EEPROM upon power-loss. Data can also be transferred manually by using either the hardware store pin or by software control. 4Kbit SRAM with EEPROM Back Up Automatic Store to EEPROM upon power-down (using optional external capacitor) Automatic Recall to SRAM Array upon power-up Hardware Store Pin for manual Store Operations Software commands for initiating Store and Recall Operations Store Time 40ms (max)

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