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SRAM Of Upgraded Versions Available Online

What is Static Random Access Memory (SRAM)?

SRAM, or Static Random Access Memory, is an electronic semiconductor memory that makes use of a bistable latching circuit, commonly referred to as flip-flops to preserve each and every bit of information in the memory. It preserves data bits on the memory circuitry until the power supply is cut off.

Static Random Access Memory is employed in the system where speed or low power are required. Its density is higher than that of dynamic random-access memory. This type of memory configuration is not complex, and it becomes ideal for use with semiconductor memory modules.

Difference between SRAM and DRAM:

Since this memory practices high-capacity storage and is integrated into the embedded system, Static Random Access Memory differs from DRAM (dynamic RAM, which stores bits in cells made up of a capacitor and a transistor) in that it does not require frequent refreshing, whereas dynamic will lose data if not. Static Random Access Memory is also more expensive and speedier than DRAM.

Features and Benefits

Access Transistors such as MAL and MAR provide access to preserved data for reading and writing operations.

Three operational stages are carried out in memory names hold, read, and write.

Bistable (cross-coupled) INVs for storage.

Word line, WL, controls access – WL=0 (hold operation), WL=1 (read/write operation).

Reliable chip for long data lifetime.

Data is held statically—semiconductor memory is being used to preserve the data, regardless of refreshing the data after each read data operation until the power is cut off to the memory.

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CY7C1041GN-10ZSXI, Cypress Semiconductor

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23A256-I/SN, Microchip

Static RAM, Microchip SRAM (Static Random Access Memory)

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CY7C1021DV33-10ZSXIT, Infineon

Temperature ranges Industrial: –40 °C to 85 °C Automotive-A: –40 °C to 85 °C Pin-and function-compatible with CY7C1021CV33 High speed tAA = 10 ns Low active power ICC = 60 mA @ 10 ns Low CMOS standby power ISB2 = 3 mA 2.0 V data retention Automatic power-down when deselected CMOS for optimum speed/power Independent control of upper and lower bits Available in Pb-free 44-pin 400-Mil wide molded SOJ, 44-pin TSOP II and 48-ball VFBGA packages

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CY7C1021DV33-10ZSXI, Infineon

The Infineon Static RAM is a high performance CMOS static RAM organized as 65536 words by 16 bits. This device has an automatic power down feature that significantly reduces power consumption when deselected. High speed Low CMOS standby power CMOS for optimum speed and power Automatic power down when deselected Independent control of upper and lower bits

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R1LV0108ESA-5SI#B1, Renesas Electronics

Low Power SRAM, R1LV Series, Renesas Electronics The R1LV Series of advanced low voltage static RAMs is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. Single 2.7V to 3.6V power supply Small stand-by current No clocks, No refresh required All inputs and outputs are TTL compatible Three-state outputs: OR-tie Capability SRAM (Static Random Access Memory)

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47L16-I/SN, Microchip

The Microchip Technology Inc 47C04 EERAM is a 4Kbit SRAM with EEPROM Backup. The I2C EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External Battery to Retain Data. The device is organized as 512 x 8 bits and utilizes the I2C serial interface. The 47C04 provides infinite read and write cycles to the SRAM while the EEPROM cells provide high endurance non-volatile storage of Data. With an external capacitor, SRAM data is automatically transferred to the EEPROM upon power-loss. Data can also be transferred manually by using either the hardware store pin or by software control. 4Kbit SRAM with EEPROM Back Up Automatic Store to EEPROM upon power-down (using optional external capacitor) Automatic Recall to SRAM Array upon power-up Hardware Store Pin for manual Store Operations Software commands for initiating Store and Recall Operations Store Time 40ms (max)

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CY621472E30LL-45ZSXI, Cypress Semiconductor

Very high speed: 45 nsTemperature rangeIndustrial: –40 °C to +85 °CWide voltage range: 2.20 V to 3.60 VUltra low standby powerTypical standby current: 1 A Maximum standby current: 7 A (Industrial)Ultra low active powerTypical active current: 2 mA at f = 1 MHzEasy memory expansion with CE1, CE2, and OE FeaturesAutomatic power down when deselectedComplementary metal oxide semiconductor (CMOS) for optimum speed and powerAvailable in Pb-free 44-pin thin small outline package (TSOP) II packageByte power down feature

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70V25L15PFG, Renesas Electronics

The Renesas Electronics 70V25 series high-speed 8K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or wider memory system applications. It has 100 lead count and has TQFP package type. The SRAM has C temperature grade. Separate upper-byte and lower-byte control for multiplexed bus compatibility 70V25 easily expands data bus width to 32 bits or more BUSY and Interrupt Flag On-chip port arbitration logic

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71V416L10PHG, Renesas Electronics

The Renesas Electronics 71V416 series 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. It has 44 lead count and has TSOP package type. The SRAM has C temperature grade. JEDEC Centre Power / GND pinout for reduced noise. Equal access and cycle times- Commercial and Industrial: 10/12/15ns One Chip Select plus one Output Enable pin Bidirectional data inputs and outputs directly LVTTL-compatible

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AS6C62256-55PCN, Alliance Memory

Static RAM, Alliance Memory SRAM (Static Random Access Memory)

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CY62148ELL-55SXI, Infineon

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

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