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SRAM Of Upgraded Versions Available Online

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CY7C1041GN-10ZSXI, Cypress Semiconductor

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CY7C1021DV33-10ZSXIT, Infineon

Temperature ranges Industrial: –40 °C to 85 °C Automotive-A: –40 °C to 85 °C Pin-and function-compatible with CY7C1021CV33 High speed tAA = 10 ns Low active power ICC = 60 mA @ 10 ns Low CMOS standby power ISB2 = 3 mA 2.0 V data retention Automatic power-down when deselected CMOS for optimum speed/power Independent control of upper and lower bits Available in Pb-free 44-pin 400-Mil wide molded SOJ, 44-pin TSOP II and 48-ball VFBGA packages

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R1LP0108ESA-5SI#B1, Renesas Electronics

Low Power SRAM, R1LP Series, Renesas Electronics The R1LP Series of advanced low voltage static RAMs is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. Single 4.5V to 5.5V power supply Small stand-by current No clocks, No refresh required All inputs and outputs are TTL compatible SRAM (Static Random Access Memory)

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RMLV0816BGSD-4S2#AC0, Renesas Electronics

Low Power SRAM, RMLV Series, Renesas Electronics The RMLV Series of high performance advanced static RAMs has realized higher density, low current consumption, and offers low power standby power dissipation. Single 2.7V to 3.6V power supply Access time: 45ns (max.) Equal access and cycle times Common data input and output with three state output All inputs and outputs are TTL compatible Suitable for battery backup operation SRAM (Static Random Access Memory)

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DS1225AB-85+, Maxim

Static RAM, Maxim Integrated SRAM (Static Random Access Memory)

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CY621472E30LL-45ZSXI, Infineon

Very high speed: 45 ns Temperature range Industrial: –40 °C to +85 °C Wide voltage range: 2.20 V to 3.60 V Ultra low standby power Typical standby current: 1 A Maximum standby current: 7 A (Industrial) Ultra low active power Typical active current: 2 mA at f = 1 MHz Easy memory expansion with CE1, CE2, and OE Features Automatic power down when deselected Complementary metal oxide semiconductor (CMOS) for optimum speed and power Available in Pb-free 44-pin thin small outline package (TSOP) II package Byte power down feature

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CY7C1345G-100AXC, Infineon

The Cypress Semiconductor CY7C1345G series is a 128K ´ 36 synchronous cache RAM designed to interface with high speed microprocessors with minimum glue logic. The maximum access delay from clock rise is 8.0 ns. A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. Provide high performance 2-1-1-1 access rate User selectable burst counter supporting Intel Pentium interleaved or linear burst sequences Separate processor and controller address strobes Synchronous self timed write Asynchronous output enable Available in Pb-free 100-pin TQFP package ZZ sleep mode option

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CY7C1354C-166AXC, Infineon

The Cypress Semiconductor CY7C1354C series are 3.3V, 256K ´ 36 synchronous pipelined burst SRAMs with no bus latency logic, respectively. They are designed to support unlimited true back-to-back read/write operations with no wait states. It is equipped with the advanced logic required to enable consecutive read/write operations with data being transferred on every clock cycle. Pin-compatible and functionally equivalent to ZBT Supports 250 MHz bus operations with zero wait states Available speed grades are 250, 200, and 166 MHz Internally self-timed output buffer control to eliminate the need to use asynchronous OE Fully registered for pipelined operation Byte write capability

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CY7C1354C-166AXI, Infineon

The Cypress Semiconductor CY7C1354C series are 3.3V, 256K ´ 36 synchronous pipelined burst SRAMs with no bus latency logic, respectively. They are designed to support unlimited true back-to-back read/write operations with no wait states. It is equipped with the advanced logic required to enable consecutive read/write operations with data being transferred on every clock cycle. Pin-compatible and functionally equivalent to ZBT Supports 250 MHz bus operations with zero wait states Available speed grades are 250, 200, and 166 MHz Internally self-timed output buffer control to eliminate the need to use asynchronous OE Fully registered for pipelined operation Byte write capability

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New items

71V416L12PHGI, Renesas Electronics

The Renesas Electronics Static RAM is of 4,194,304-bit high-speed organized as 256K x 16. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high speed memory needs. It has an output enable pin which operates as fast as 5ns with address access times as fast as 10ns All bidirectional inputs and outputs of the IDT71V416 are LVTTL-compatible Fully static asynchronous circuitry is used requiring no clocks or refresh for operation It has JEDEC centre power / GND pinout for reduced noise Provides bidirectional data inputs and outputs directly Low power consumption via chip deselect

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71V424S12PHGI, Renesas Electronics

The Renesas Electronics Static RAM is of 4,194,304-bit high-speed organized as 512K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state of the art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs. It has an output enable pin which operates as fast as 5ns with address access times as fast as 10ns All bidirectional inputs and outputs of the IDT71V424 are TTL-compatible It provides JEDEC Centre Power / GND pinout for reduced noise Low power consumption via chip deselect Industrial temperature range of –40°C to +85°C is available for selected speeds

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