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SRAM Of Upgraded Versions Available Online

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CY7C1041GN-10ZSXI, Cypress Semiconductor

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CY62137FV30LL-45BVXI, Cypress Semiconductor

Asynchronous Static RAM Memory, Cypress Semiconductor SRAM (Static Random Access Memory)

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RMLV1616AGSA-5S2#AA0, Renesas Electronics

Low Power SRAM, RMLV Series, Renesas Electronics The RMLV Series of high performance advanced static RAMs has realized higher density, low current consumption, and offers low power standby power dissipation. Single 2.7V to 3.6V power supply Access time: 45ns (max.) Equal access and cycle times Common data input and output with three state output All inputs and outputs are TTL compatible Suitable for battery backup operation SRAM (Static Random Access Memory)

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CY62167EV30LL-45ZXA, Cypress Semiconductor

Asynchronous Static RAM Memory, Cypress Semiconductor SRAM (Static Random Access Memory)

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CY7C1010DV33-10ZSXI, Cypress Semiconductor

The Cypress Semiconductor CY7C1010DV33 is a high performance CMOS static RAM organized as 256 K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE), an active LOW output Enable (OE), and three-state drivers. High speed typically of 10 ns Low standby power Automatic power down when deselected TTL-compatible inputs and outputs

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CY621472E30LL-45ZSXI, Infineon

Very high speed: 45 ns Temperature range Industrial: –40 °C to +85 °C Wide voltage range: 2.20 V to 3.60 V Ultra low standby power Typical standby current: 1 A Maximum standby current: 7 A (Industrial) Ultra low active power Typical active current: 2 mA at f = 1 MHz Easy memory expansion with CE1, CE2, and OE Features Automatic power down when deselected Complementary metal oxide semiconductor (CMOS) for optimum speed and power Available in Pb-free 44-pin thin small outline package (TSOP) II package Byte power down feature

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CY7C1345G-100AXC, Infineon

The Cypress Semiconductor CY7C1345G series is a 128K ´ 36 synchronous cache RAM designed to interface with high speed microprocessors with minimum glue logic. The maximum access delay from clock rise is 8.0 ns. A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. Provide high performance 2-1-1-1 access rate User selectable burst counter supporting Intel Pentium interleaved or linear burst sequences Separate processor and controller address strobes Synchronous self timed write Asynchronous output enable Available in Pb-free 100-pin TQFP package ZZ sleep mode option

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CY7C1354C-166AXC, Infineon

The Cypress Semiconductor CY7C1354C series are 3.3V, 256K ´ 36 synchronous pipelined burst SRAMs with no bus latency logic, respectively. They are designed to support unlimited true back-to-back read/write operations with no wait states. It is equipped with the advanced logic required to enable consecutive read/write operations with data being transferred on every clock cycle. Pin-compatible and functionally equivalent to ZBT Supports 250 MHz bus operations with zero wait states Available speed grades are 250, 200, and 166 MHz Internally self-timed output buffer control to eliminate the need to use asynchronous OE Fully registered for pipelined operation Byte write capability

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CY7C1354C-166AXI, Infineon

The Cypress Semiconductor CY7C1354C series are 3.3V, 256K ´ 36 synchronous pipelined burst SRAMs with no bus latency logic, respectively. They are designed to support unlimited true back-to-back read/write operations with no wait states. It is equipped with the advanced logic required to enable consecutive read/write operations with data being transferred on every clock cycle. Pin-compatible and functionally equivalent to ZBT Supports 250 MHz bus operations with zero wait states Available speed grades are 250, 200, and 166 MHz Internally self-timed output buffer control to eliminate the need to use asynchronous OE Fully registered for pipelined operation Byte write capability

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71V416L12PHGI, Renesas Electronics

The Renesas Electronics Static RAM is of 4,194,304-bit high-speed organized as 256K x 16. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high speed memory needs. It has an output enable pin which operates as fast as 5ns with address access times as fast as 10ns All bidirectional inputs and outputs of the IDT71V416 are LVTTL-compatible Fully static asynchronous circuitry is used requiring no clocks or refresh for operation It has JEDEC centre power / GND pinout for reduced noise Provides bidirectional data inputs and outputs directly Low power consumption via chip deselect

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71V424S12PHGI, Renesas Electronics

The Renesas Electronics Static RAM is of 4,194,304-bit high-speed organized as 512K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state of the art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs. It has an output enable pin which operates as fast as 5ns with address access times as fast as 10ns All bidirectional inputs and outputs of the IDT71V424 are TTL-compatible It provides JEDEC Centre Power / GND pinout for reduced noise Low power consumption via chip deselect Industrial temperature range of –40°C to +85°C is available for selected speeds

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