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PSoC 1 (M8C Core), Cypress The PSoC 1 (Programmable Embedded System-on-Chip) family consists of M8C-core mi...
The FL-L family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output(Single I/O...
PSoC 5LP (ARM Cortex-M3 Core), Cypress The Cypress Semiconductor PSoC 5LP (Programmable Embedded System-on-Chip) in...
S6SBP202A1FVA1001 is the evaluation kit for primary power block for automotive. S6BP202A is a 1ch Buck-boost DC/DC converter IC with four built-i...
Serial-SPI NOR Flash Memory, Cypress Semiconductor High performance Low pin-count Quad SPI (Serial Peripheral Inter...
Serial-SPI NOR Flash Memory, Cypress Semiconductor High performance Low pin-count Quad SPI (Serial Peripheral Inter...
The Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access ti...
The S29AL008J is a 8 Mbit, 3.0 Volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball Fine-pitch...
63 nm MirrorBit Eclipse TechnologySingle supply (VCC) for read / program / erase (2.7 V to 3.6 V)Versatile I/O featureWide I/O voltage range (VIO...
The Cypress CY14B101KA/CY14B101MA combines a 1-Mbit nvSRAM with a full featured real time clock in a monolithic integrated circuit. The embedded...
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Categories For Cypress Semiconductor
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CY8C28452-24PVXI, Cypress Semiconductor
PSoC 1 (M8C Core), Cypress
The PSoC 1 (Programmable Embedded System-on-Chip) family consists of M8C-core microcontroller devices featuring configurable blocks of analogue and digital logic, and programmable interconnects. Additionally, Flash program memory, SRAM data memory and configurable I/O are included.
Popular items
Popular items
S25FL064LABMFA001, Cypress Semiconductor
The FL-L family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output(Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit wide Quad I/O (QIO) and Quad Peripheral Interface (QPI) commands. In addition, there are Double Data Rate (DDR) read commands for QIO and QPI that transfer address and read data on both edges of the clock.The architecture features a Page Programming Buffer that allows up to 256 bytes to be programmed in one operation and providesindividual 4 KB sector, 32 KB half block sector, 64 KB block sector, or entire chip erase.By using FL-L family devices at the higher clock rates supported, with Quad commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR Flash memories, while reducing signal count dramatically.The FL-L family products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. Provides an ideal storage solution for systems with limited space, signal connections and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM,executing code directly (XIP) and storing re-programmable data.
Popular items
CY8C5888AXI-LP096, Cypress Semiconductor
PSoC 5LP (ARM Cortex-M3 Core), Cypress
The Cypress Semiconductor PSoC 5LP (Programmable Embedded System-on-Chip) incorporates configurable memory, microcontroller (MCU), analogue and digital peripherals all on one chip (IC). The PSoC 5LP platform architecture has a 32-bit ARM Cortex-M3 core along with direct memory access (DMA) controller and digital filter processor up to 80 MHz.
Flexible routing
Wide voltage range
Popular items
S6SBP202A1FVA1001, Cypress Semiconductor
S6SBP202A1FVA1001 is the evaluation kit for primary power block for automotive.
S6BP202A is a 1ch Buck-boost DC/DC converter IC with four built-in switching FETs. This IC is able to supply up to 2.4A of load current within the very wide range from 2.5V to 42V in the input voltage. This IC has an operation mode that is automatically changed to PFM operation during low load, which can achieve super-high efficiency with a very low quiescent current 20 μA. It is possible to provide stable output voltage from an automotive cold cranking and load dump, up to 42V, conditions within 1 ms transition time. As a result, this IC is suitable for power supply solutions of automotive and Industrial applications.
Popular items
S25FL256SAGMFIG01, Cypress Semiconductor
Serial-SPI NOR Flash Memory, Cypress Semiconductor
High performance
Low pin-count Quad SPI (Serial Peripheral Interface)
Flash Memory
FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
Popular items
S70FL01GSAGMFI011, Cypress Semiconductor
Serial-SPI NOR Flash Memory, Cypress Semiconductor
High performance
Low pin-count Quad SPI (Serial Peripheral Interface)
Flash Memory
FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
Popular items
S29GL128P11FFI020, Cypress Semiconductor
The Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for todays embedded applications that require higher density, better performance and lower power consumption.
Popular items
S29AL008J70TFI013, Cypress Semiconductor
The S29AL008J is a 8 Mbit, 3.0 Volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball Fine-pitch BGA (0.8 mm pitch) and 48pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0, the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.The device offers access times of up to 55 ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four.Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. Duringerase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7(Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command.
Popular items
S29GL512T11FHIV20, Cypress Semiconductor
63 nm MirrorBit Eclipse TechnologySingle supply (VCC) for read / program / erase (2.7 V to 3.6 V)Versatile I/O featureWide I/O voltage range (VIO): 1.65 V to VCCx8/x16 data busAsynchronous 32-byte Page read512-byte Programming BufferProgramming in 12 bytesSingle word and multiple program on same word optionsAutomatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correctionSector EraseUniform 128-KB sectorsSuspend and Resume commands for Program and Erase operationsStatus Register, Data Polling and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP)Volatile and non-volatile protection methods for each sectorSeparate 2048-byte One-Time Program (OTP) arrayFour lockable regions (SSR0 - SSR3)SSR0 is Factory LockedSSR3 is Password Read ProtectCommon Flash Interface (CFI) parameter tableTemperature Range / Grade:Industrial (-40 °C to +85 °C)Industrial Plus (-40 °C to +105 °C)Extended (-40 °C to +125 °C)100,000 Program / Erase Cycles20-year data retention፤
Popular items
CY14B101KA-SP45XI, Cypress Semiconductor
The Cypress CY14B101KA/CY14B101MA combines a 1-Mbit nvSRAM with a full featured real time clock in a monolithic integrated circuit. The embedded nonvolatile elements incorporate QuantumTrap technology producing reliable nonvolatile memory. The SRAM is read and written an infinite number of times, while independent nonvolatile data resides in the nonvolatile elements. The real time clock function provides an accurate clock with leap year tracking and a programmable, high accuracy oscillator. The alarm function is programmable for periodic minutes, hours, days, or months alarms. There is also a programmable watchdog timer for process control.
New Items
New items
CY8C28452-24PVXI, Cypress Semiconductor
PSoC 1 (M8C Core), Cypress
The PSoC 1 (Programmable Embedded System-on-Chip) family consists of M8C-core microcontroller devices featuring configurable blocks of analogue and digital logic, and programmable interconnects. Additionally, Flash program memory, SRAM data memory and configurable I/O are included.
New items
S25FL064LABMFA001, Cypress Semiconductor
The FL-L family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output(Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit wide Quad I/O (QIO) and Quad Peripheral Interface (QPI) commands. In addition, there are Double Data Rate (DDR) read commands for QIO and QPI that transfer address and read data on both edges of the clock.The architecture features a Page Programming Buffer that allows up to 256 bytes to be programmed in one operation and providesindividual 4 KB sector, 32 KB half block sector, 64 KB block sector, or entire chip erase.By using FL-L family devices at the higher clock rates supported, with Quad commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR Flash memories, while reducing signal count dramatically.The FL-L family products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. Provides an ideal storage solution for systems with limited space, signal connections and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM,executing code directly (XIP) and storing re-programmable data.
New items
CY8C5888AXI-LP096, Cypress Semiconductor
PSoC 5LP (ARM Cortex-M3 Core), Cypress
The Cypress Semiconductor PSoC 5LP (Programmable Embedded System-on-Chip) incorporates configurable memory, microcontroller (MCU), analogue and digital peripherals all on one chip (IC). The PSoC 5LP platform architecture has a 32-bit ARM Cortex-M3 core along with direct memory access (DMA) controller and digital filter processor up to 80 MHz.
Flexible routing
Wide voltage range
New items
S6SBP202A1FVA1001, Cypress Semiconductor
S6SBP202A1FVA1001 is the evaluation kit for primary power block for automotive.
S6BP202A is a 1ch Buck-boost DC/DC converter IC with four built-in switching FETs. This IC is able to supply up to 2.4A of load current within the very wide range from 2.5V to 42V in the input voltage. This IC has an operation mode that is automatically changed to PFM operation during low load, which can achieve super-high efficiency with a very low quiescent current 20 μA. It is possible to provide stable output voltage from an automotive cold cranking and load dump, up to 42V, conditions within 1 ms transition time. As a result, this IC is suitable for power supply solutions of automotive and Industrial applications.
New items
S25FL256SAGMFIG01, Cypress Semiconductor
Serial-SPI NOR Flash Memory, Cypress Semiconductor
High performance
Low pin-count Quad SPI (Serial Peripheral Interface)
Flash Memory
FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
New items
S70FL01GSAGMFI011, Cypress Semiconductor
Serial-SPI NOR Flash Memory, Cypress Semiconductor
High performance
Low pin-count Quad SPI (Serial Peripheral Interface)
Flash Memory
FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
New items
S29GL128P11FFI020, Cypress Semiconductor
The Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for todays embedded applications that require higher density, better performance and lower power consumption.
New items
S29AL008J70TFI013, Cypress Semiconductor
The S29AL008J is a 8 Mbit, 3.0 Volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball Fine-pitch BGA (0.8 mm pitch) and 48pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0, the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.The device offers access times of up to 55 ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four.Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. Duringerase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7(Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command.
New items
S29GL512T11FHIV20, Cypress Semiconductor
63 nm MirrorBit Eclipse TechnologySingle supply (VCC) for read / program / erase (2.7 V to 3.6 V)Versatile I/O featureWide I/O voltage range (VIO): 1.65 V to VCCx8/x16 data busAsynchronous 32-byte Page read512-byte Programming BufferProgramming in 12 bytesSingle word and multiple program on same word optionsAutomatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correctionSector EraseUniform 128-KB sectorsSuspend and Resume commands for Program and Erase operationsStatus Register, Data Polling and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP)Volatile and non-volatile protection methods for each sectorSeparate 2048-byte One-Time Program (OTP) arrayFour lockable regions (SSR0 - SSR3)SSR0 is Factory LockedSSR3 is Password Read ProtectCommon Flash Interface (CFI) parameter tableTemperature Range / Grade:Industrial (-40 °C to +85 °C)Industrial Plus (-40 °C to +105 °C)Extended (-40 °C to +125 °C)100,000 Program / Erase Cycles20-year data retention፤
New items
CY14B101KA-SP45XI, Cypress Semiconductor
The Cypress CY14B101KA/CY14B101MA combines a 1-Mbit nvSRAM with a full featured real time clock in a monolithic integrated circuit. The embedded nonvolatile elements incorporate QuantumTrap technology producing reliable nonvolatile memory. The SRAM is read and written an infinite number of times, while independent nonvolatile data resides in the nonvolatile elements. The real time clock function provides an accurate clock with leap year tracking and a programmable, high accuracy oscillator. The alarm function is programmable for periodic minutes, hours, days, or months alarms. There is also a programmable watchdog timer for process control.
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