What are the shipping charges for products like Flash Memory?

Yes. We keep updating our stock frequently and if a product like Flash Memory is not in stock then we will let you know.

How do I contact the Customer Support Team?

Yes. We keep updating our stock frequently and if a product like Flash Memory is not in stock then we will let you know.

Where are your products like Flash Memory manufactured?

Yes. We keep updating our stock frequently and if a product like Flash Memory is not in stock then we will let you know.

Do you offer any discounts on bulk orders of products like Flash Memory?

Yes. We keep updating our stock frequently and if a product like Flash Memory is not in stock then we will let you know.

How long will it take to receive the order that I placed for Flash Memory?

Yes. We keep updating our stock frequently and if a product like Flash Memory is not in stock then we will let you know.

Are your products Flash Memory in stock?

Yes. We keep updating our stock frequently and if a product like Flash Memory is not in stock then we will let you know.

Flash Memory Of Upgraded Versions Available Online

New items

S25FS512SAGMFI011, Cypress Semiconductor

The S25FS512S connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output(Single I/O or SIO) is supported as well as optional twobit (Dual I/O or DIO) and fourbit wide Quad I/O (QIO) or Quad PeripheralInterface (QPI) serial commands. This multiple-width interface is called SPI Multi-I/O or MIO. In addition, there are Double Data Rate(DDR) read commands for QIO and QPI that transfer address and read data on both edges of the clock.The FS-S Eclipse architecture features a Page Programming Buffer that allows up to 512 bytes to be programmed in one operation,resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Executing code directly from flash memory is often called Execute-In-Place or XIP. By using S25FS512S devices at the higher clockrates supported, with Quad or DDR-Quad commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories, while reducing signal count dramatically.The S25FS512S products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. They are an excellent solution for systems with limited space, signal connections and power. They are ideal forcode shadowing to RAM, executing code directly (XIP) and storing reprogrammable data.

Product Detail

New items

W25Q256JVEIM, Winbond

Product Detail

New items

S25FS064SAGMFV010, Cypress Semiconductor

Product Detail

New items

S29GL064N90TFI070, Cypress Semiconductor

Flash Memory using MirrorBit Technology, Cypress Semiconductor (Spansion) Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.

Product Detail

New items

S34ML02G100TFI000, Cypress Semiconductor

SLC NAND Flash Memory, Cypress Semiconductor 3V (ML-1) High Reliability NAND Flash for Embedded ML Nand Flash Memory organisation format range: 128 M x 8 bit, 64 M x 16 bit - S34ML01G100BHI000 , S34ML01G100TFI000 128 M x 16 bit, 256 M x 8 bit - S34ML02G100BHI000 , S34ML02G100TFI000 256M x 16 bit, 512M x 8 bit - S34ML04G100BHI000 , S34ML04G100TFI000 Open NAND Flash Interface (ONFI) 1.0 NAND Flash Memory

Product Detail

New items

S26HS512TGABHI010, Cypress Semiconductor

Cypress NOR Flash Memory is a non-volatile storage solution that integrates safety features for automotive and industrial systems. Applications include automotive instrument clusters, advanced driver assistance systems (ADAS), and networking communications. EnduraFlex™ Architecture: Partition memory to provide up to 25-years data retention and 1+ million program/erase cycles endurance, JEDEC xSPI compatible, Data Integrity Check and Interface CRC Certificates: ISO 26262 ASIL B Compliant, ISO 26262 ASIL-D ready. FMEDA and safety manual Single error correction and double error detection (SECDED) SafeBoot

Product Detail

New items

S25HS512TDPMHI010, Cypress Semiconductor

Cypress NOR Flash Memory is a non-volatile storage solution that integrates safety features for automotive and industrial systems. Applications include automotive instrument clusters, advanced driver assistance systems (ADAS), and networking communications. EnduraFlex™ Architecture: Partition memory to provide up to 25-years data retention and 1+ million program/erase cycles endurance, JEDEC xSPI compatible, Data Integrity Check and Interface CRC Certificates: ISO 26262 ASIL B Compliant, ISO 26262 ASIL-D ready. FMEDA and safety manual Single error correction and double error detection (SECDED) SafeBoot

Product Detail

New items

SST25VF016B-50-4I-S2AF-T, Microchip

SST's 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF016B devices are enhanced with improved operating frequency which lowers power consumption. SST25VF016B SPI serial flash memories are manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. Single Voltage Read and Write Operations Serial Interface Architecture High Speed Clock Frequency Hold Pin - Suspend a serial sequence without deselecting the device Write Protection - Enables/Disables the Lock-Down function of the status register Software Write Protection - Write protection through Block-Protection bits in status register Temperature Range -40°C to +85°C

Product Detail

New items

SST26WF016B-104I/SN, Microchip

SST26WF040B/080B/016B Serial Quad I/O (SQI) SuperFlash® Flash Memory From Microchip the SST26WFxxxB family of products are Serial Quad I/O (SQI) Flash Memory devices available in 4-, 8- and 16-bit variants. These devices support full command-set compatibility with Serial Peripheral Interface (SPI) protocol and enable minimum latency Execute-in-Place (XIP) capability without the need for code shadowing on an SRAM. The SST26WFxxxB devices exhibit low power consumption, making them suitable for portable battery powered applications. Features Operating Voltage Range 1.6 to 1.95 V Clock Frequency 104 MHz max Serial Interface Architecture Low Power Consumption: Active Read Current: 15 mA (typical at 104 MHz), Standby Current: 10 μA (typical) Burst Modes: Continuous Linear Burst, 8/16/32/64 Byte Linear Burst with Wrap-Around Page-Program: 256 Bytes per page in x1 or x4 mode Fast Erase Time: Sector/Block Erase 18 ms (typ), 25 ms (max); Chip Erase 35 ms (typ), 50 ms (max) Flexible Erase Capability End-of-Write Detection Write-Suspend Software Protection Software Reset (RST) Mode SFDP (Serial Flash Discoverable Parameters) Flash Memory, Microchip

Product Detail

New items

S29AL008J70TFI013, Cypress Semiconductor

The S29AL008J is a 8 Mbit, 3.0 Volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball Fine-pitch BGA (0.8 mm pitch) and 48pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0, the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.The device offers access times of up to 55 ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four.Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. Duringerase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7(Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command.

Product Detail

New items

S29AL008J70TFI010, Cypress Semiconductor

Parallel NOR Flash Memory, Cypress Semiconductor High performance Fast random-access and high bandwidth Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.

Product Detail

New items

S25FL064LABNFI010, Cypress Semiconductor

The FL-L family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output(Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit wide Quad I/O (QIO) and Quad Peripheral Interface (QPI) commands. In addition, there are Double Data Rate (DDR) read commands for QIO and QPI that transfer address and read data on both edges of the clock.The architecture features a Page Programming Buffer that allows up to 256 bytes to be programmed in one operation and providesindividual 4 KB sector, 32 KB half block sector, 64 KB block sector, or entire chip erase.By using FL-L family devices at the higher clock rates supported, with Quad commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR Flash memories, while reducing signal count dramatically.The FL-L family products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. Provides an ideal storage solution for systems with limited space, signal connections and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM,executing code directly (XIP) and storing re-programmable data.

Product Detail