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Products Found: 565

Showing Results For: Flash Memory

Flash Memory


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IC FLASH 16MBIT 86MHZ 8WSON
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AMIC Technology
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Flash Memory, AMIC Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
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SST39VF3201/3202 Parallel SuperFlash® Memory Flash Memory, Microchip
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Cypress Semiconductor
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Flash Memory using MirrorBit Technology, Cypress Semiconductor (Spansion) Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
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Cypress Semiconductor
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Flash Memory using MirrorBit Technology, Cypress Semiconductor (Spansion) Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
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Cypress Semiconductor
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SLC NAND Flash Memory, Cypress Semiconductor 3V (ML-1) High Reliability NAND Flash for Embedded ML Nand Flash Memory organisation format range: 128 M x 8 bit, 64 M x 16 bit - S34ML01G100BHI000 , S34ML01G100TFI000 128 M x 16 bit, 256 M x 8 bit - S34ML02G100BHI000 , S34ML02G100TFI000 256M x 16 bit, 512M x 8 bit - S34ML04G100BHI000 , S34ML04G100TFI000 Open NAND Flash Interface (ONFI) 1.0 NAND Flash Memory
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SST25VF512 Serial SPI SuperFlash® Memory Flash Memory, Microchip
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Flash Memory, Toshiba Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
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SST26VF016B/032B/064B Serial Quad I/O (SQI) SuperFlash® Memory The SST26VF016B/032B/064B family of devices from Microchip are Serial Quad I/O™ (SQI™) interface SuperFlash® memory ICs featuring a six-wire, 4-bit I/O interface that allow for low power, high performance operation in a compact low pin-count package. The use of Microchip’s SQI™ interface results in performance of up to 104 MHz and enables low-latency execute-in-place (XIP) capability with minimal processor buffer memory. These flash memory chips also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol. Through the use of SuperFlash® technology these devices offer exceptional erase times that compare very favourably to other Flash memory alternatives. Sector and block erase commands are typically completed in 18 ms, full chip erase operation taking a typical 35 ms. Features Serial Interface Architecture – Nibble-Wide Multiplexed I/O’s with SPI-like Serial Command Structure x1/x2/x4 Serial Peripheral Interface (SPI) Protocol High Speed Clock Frequency- 104 MHz Max Burst Modes Low Power Consumption – Active Read 15 mA (Typical at 104 MHz), Standby 15 μA (Typical) Fast Erase Time - Sector/Block Erase: 18 ms (Typical); Chip Erase 35 ms (Typical) Flexible Erase Capability Software Write Protection Flash Memory, Microchip
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Cypress Semiconductor
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Microchip SST39VF6402B-70-4C-EKE, Parallel 64Mbit Flash Memory, 70ns; 3V, 48-Pin TSOP
SST39VF6401B/6402B Parallel SuperFlash® Memory Flash Memory, Microchip
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Cypress Semiconductor S25FL164K0XMFI011, SPI 64Mbit Flash Memory; 3V, 8-Pin SOIC
Serial-SPI NOR Flash Memory, Cypress Semiconductor High performance Low pin-count Quad SPI (Serial Peripheral Interface) Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
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Toshiba TC58NVG0S3EBAI4, Parallel 1 Gbyte Flash Memory, 25ns; 3V, 63-Pin TFBGA
Flash Memory, Toshiba Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
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Microchip SST26VF016B-104V/SM, SPI 16Mbit Flash Memory Chip, 8-Pin SOIJ
SST26VF016B/032B/064B Serial Quad I/O (SQI) SuperFlash® Memory The SST26VF016B/032B/064B family of devices from Microchip are Serial Quad I/O™ (SQI™) interface SuperFlash® memory ICs featuring a six-wire, 4-bit I/O interface that allow for low power, high performance operation in a compact low pin-count package. The use of Microchip’s SQI™ interface results in performance of up to 104 MHz and enables low-latency execute-in-place (XIP) capability with minimal processor buffer memory. These flash memory chips also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol. Through the use of SuperFlash® technology these devices offer exceptional erase times that compare very favourably to other Flash memory alternatives. Sector and block erase commands are typically completed in 18 ms, full chip erase operation taking a typical 35 ms. Features Serial Interface Architecture – Nibble-Wide Multiplexed I/O’s with SPI-like Serial Command Structure x1/x2/x4 Serial Peripheral Interface (SPI) Protocol High Speed Clock Frequency- 104 MHz Max Burst Modes Low Power Consumption – Active Read 15 mA (Typical at 104 MHz), Standby 15 μA (Typical) Fast Erase Time - Sector/Block Erase: 18 ms (Typical); Chip Erase 35 ms (Typical) Flexible Erase Capability Software Write Protection Flash Memory, Microchip
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AMIC Technology A25L080M-F, Serial 8Mbit Flash Memory, 8ns; 3V, SOP, 8-Pin
Flash Memory, AMIC Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
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Microchip SST39VF3201-70-4C-EKE, Parallel 32Mbit Flash Memory, 70ns; 3V, TSOP, 48-Pin
SST39VF3201/3202 Parallel SuperFlash® Memory Flash Memory, Microchip
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Microchip SST25VF512-20-4C-SAE, SPI 512kbit Flash Memory, 20ns, 8-Pin SOIC
SST25VF512 Serial SPI SuperFlash® Memory Flash Memory, Microchip
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Cypress Semiconductor S29GL01GT11FHIV10, CFI NOR 1024Mbit Flash Memory Chip, 110ns, 64-Pin BGA
53 nm MirrorBit Eclipse TechnologySingle supply (VCC) for read / program / erase (2.7 V to 3.6 V)Versatile I/O featureWide I/O voltage range (VIO): 1.65 V to VCCx8/x16 data busAsynchronous 32-byte Page read512-byte Programming BufferProgramming in up to a maximum of 512 bytesSingle word and multiple program on same word optionsAutomatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correctionSector EraseUniform 128-KB sectorsSuspend and Resume commands for Program and Erase operationsStatus Register, Data Polling and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP)Volatile and non-volatile protection methods for each sectorSeparate 2048-byte One-Time Program (OTP) arrayFour lockable regions (SSR0 - SSR3)SSR0 is Factory LockedSSR3 is Password Read ProtectCommon Flash Interface (CFI) parameter tableTemperature Range / Grade:Industrial (-40 °C to +85 °C)Industrial Plus (-40 °C to +105 °C)Extended (-40 °C to +125 °C)100,000 Program / Erase Cycles20-year data retention፤
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Cypress Semiconductor S29GL512S10FHI010, CFI NOR 512Mbit Flash Memory Chip, 100ns, 64-Pin BGA
CMOS 3.0 Volt Core with Versatile I/O65 nm MirrorBit Eclipse TechnologySingle supply (VCC) for read / program / erase (2.7 V to 3.6 V)Versatile I/O FeatureWide I/O voltage range (VIO): 1.65 V to VCC ´ 16 data busAsynchronous 32-byte Page read512-byte Programming BufferProgramming in Page multiples, up to a maximum of 512 bytesSingle word and multiple program on same word optionsAutomatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correctionSector EraseUniform 128Kb sectorsSuspend and Resume commands for Program and Erase operationsStatus Register, Data Polling and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP)Volatile and non-volatile protection methods for each sectorSeparate 1024-byte One Time Program (OTP) array with two lockable regionsCommon Flash Interface (CFI) parameter tableTemperature Range / GradeIndustrial (-40 °C to +85 °C)Industrial Plus(-40 °C to +105 °C)100,000 Program / Erase Cycles20 Years Data RetentionPackaging Options56pin TSOP64-ball LAA Fortified BGA, 13 mm ´ 11 mm64-ball LAE Fortified BGA, 9 mm ´ 9 mm56-ball VBU Fortified BGA, 9 mm ´ 7 mm
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Cypress Semiconductor S25FL128SAGMFI010, SPI NOR 128Mbit Flash Memory Chip, 8-Pin SOIC
This family of devices connect to a host system via a SPI. Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiple width interface is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for DDR read commands for SIO, DIO and QIO that transfer address and read data on both edges of the clock.The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically.The S25FL128S and S25FL256S products offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP and data storage.
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Cypress Semiconductor S25FL512SAGBHIA10, CFI, SPI NOR 512Mbit Flash Memory Chip, 24-Pin BGA
This device connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (SingleI/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiplewidth interface is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for Double Data Rate (DDR) read commands for SIO, DIO and QIO that transfer address and read data on both edges of the clock.The Eclipse architecture features a Page Programming Buffer that allows up to 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface,asynchronous, NOR flash memories while reducing signal count dramatically.The S25FL512S product offers high densities coupled with the flexibility and fast performance required by a variety of embedded applications. It is ideal for code shadowing, XIP and data storage.
Added items
Cypress Semiconductor S29GL01GT10FHI010, CFI NOR 1024Mbit Flash Memory Chip, 100ns, 64-Pin BGA
45 nm MirrorBit Eclipse TechnologySingle supply (VCC) for read / program / erase (2.7 V to 3.6 V)Versatile I/O featureWide I/O voltage range (VIO): 1.65 V to VCCx8/x16 data busAsynchronous 32-byte Page read512-byte Programming BufferProgramming in Page multiples, up to a maximum of 512 bytesSingle word and multiple program on same word optionsAutomatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correctionSector EraseUniform 128-KB sectorsSuspend and Resume commands for Program and Erase operationsStatus Register, Data Polling and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP)Volatile and non-volatile protection methods for each sectorSeparate 2048-byte One-Time Program (OTP) arrayFour lockable regions (SSR0 - SSR3)SSR0 is Factory LockedSSR3 is Password Read ProtectCommon Flash Interface (CFI) parameter tableTemperature Range / Grade:Industrial (-40 °C to +85 °C)Industrial Plus (-40 °C to +105 °C)Extended (-40 °C to +125 °C)100,000 Program / Erase Cycles20-year data retention
FAQs

We offer free shipping for orders over £200 if delivery is in the UK. All other orders in the UK, shipping from £7.99 depending on the weight and measurement. Mainland Europe shipping charges start from £25. For all other countries shipping charges start from £50 for products like Flash Memory and all others.

You can email us directly at sales@enrgtech.co.uk or via our website for any queries regarding Flash Memory or any other product.

This depends on the Flash Memory individual product and information that can be found on our website.

Yes, we offer special discounts on orders above £200 for Flash Memory and all other products.

UK orders normally take between 2/3 working days. International orders normally take between 3/5 working days for all products including Flash Memory.

Yes. We keep updating our stock frequently and if a product like Flash Memory is not in stock then we will let you know.