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Showing Results For: FRAM Memory

FRAM Memory

What is FRAM memory? The FRAM memory is a high-speed nonvolatile memory with unique polarization property, which makes it suitable for storing data even in the smallest spaces. Unlike traditional EEPROM, FRAM does not use pages to store information. This allows it to be written faster than the SPI bus can deliver new information. It makes it a desirable choice for personal and industrial applications. It is a low-power, versatile solution.  Like any other storage device, the information i...

What is FRAM memory?

The FRAM memory is a high-speed nonvolatile memory with unique polarization property, which makes it suitable for storing data even in the smallest spaces. Unlike traditional EEPROM, FRAM does not use pages to store information. This allows it to be written faster than the SPI bus can deliver new information. It makes it a desirable choice for personal and industrial applications. It is a low-power, versatile solution. 

Like any other storage device, the information is stored in a cell and remains there even after the transistor is turned off. Technology is fast enough to write and read one byte every 125 nanoseconds, a thousand times faster than flash storage. For reference, a single application reaching the end of a flash segment can result in a 20-millisecond latency. With this speed, FRAM can reduce latency significantly, resulting in a significant reduction in system costs. As a result, the benefits of FRAM are many.

Benefits:

The advantages of FRAM include;

  • · Its high speed provides more than one trillion read/write cycles and low power consumption. 
  • · It can save billions of dollars in just a few seconds, and its long lifespan and energy efficiency make it a superior alternative to electrically volatile memory. 
  • · It is fast, durable and reliable
  • · Its high-density structure makes it a more efficient storage medium and faster than ROM.
  • · They can maintain their memory for up to 95 years when stored at room temperature.

Types of storage memories:

In addition to the FRAM memory, other types of memory can also be used in smart meters. The 1T1C structure has a higher integration density than the other two, but its reliability is lower. The second type is a hybrid of the 2T1C and 1T1C forms. The one that is most popular among the three is the 1T2C structure. This structure is a compromise between the first two. The first is more flexible, while the other is more robust.

Nonvolatile Memory

The second type of memory is a nonvolatile one. It is made of silicon. The DRAM is limited by its capacity to store and drain charge. The data can be read out only when the battery power fails. In contrast, nonvolatile memory can be erased and reused repeatedly. The third is not durable and has low energy consumption. This is why many DRAMs have limited capacities.

Ferroelectric random-access memory

The third type of memory is called the ferroelectric random-access memory. It uses a ferroelectric film as a capacitor. The dipole is located inside an oxygen octahedron. It is difficult to switch from one polarity to another because of its free electric charge or ionic defects. The fourth type of memory uses magnetoresistive RAM. It is a nonvolatile, permanent memory with unlimited endurance.

Applications of the product: 

A high speed and small size make these devices attractive for many applications. Its high capacity makes it an excellent choice for the automotive industry. This memory is widely used in smartphones and other consumer electronics. Furthermore, they are used to store data in various industrial settings, such as ATMs. It is also commonly used in fax machines and commercial settlement systems. 

Conclusion: 

These high-speed and high-capacity products are widely used in various applications such as smart meters, cameras, and more. It is also compatible with a wide range of systems. If you want to know more, you can contact our experts for the solution.


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Cypress Semiconductor
Rohs Verified
F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption FRAM (Ferroelectric RAM) FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Cypress Semiconductor
Rohs Verified
F-RAM Processor Companion Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory Real-time Clock (RTC) Low Voltage Reset Watchdog Timer Early Power-Fail Warning/NMI Two 16-bit Event Counters Serial Number with Write-lock for Security Battery-backed switchover Event Counter Tracking I²C interface
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Cypress Semiconductor
Rohs Verified
A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the CY15B004Q performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance. The CY15B004Q is capable of supporting 1013 read/write cycles, or 10 million times more write cycles than EEPROM. These capabilities make the CY15B004Q ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss.
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Cypress Semiconductor
Rohs Verified
Low power, 4-Mbit nonvolatilememory employing an advanced ferroelectric process. A ferro-electric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities,overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other nonvolatile memories. Capable of supporting 1015 read/write cycles, or 1000 million times morewrite cycles than EEPROM. Ideal for nonvolatile memory applications, requiring frequent or rapid writes. Provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. Uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology.
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Cypress Semiconductor
Rohs Verified
F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption FRAM (Ferroelectric RAM) FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Check Stock & Lead Times Packaging Options
Cypress Semiconductor
Rohs Verified
F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption FRAM (Ferroelectric RAM) FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Check Stock & Lead Times Packaging Options
Cypress Semiconductor
Rohs Verified
F-RAM Processor Companion Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory Real-time Clock (RTC) Low Voltage Reset Watchdog Timer Early Power-Fail Warning/NMI Two 16-bit Event Counters Serial Number with Write-lock for Security Battery-backed switchover Event Counter Tracking I²C interface
Check Stock & Lead Times Packaging Options
Cypress Semiconductor
Rohs Verified
F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption FRAM (Ferroelectric RAM) FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Check Stock & Lead Times Packaging Options
Cypress Semiconductor
Rohs Verified
Check Stock & Lead Times Packaging Options
Cypress Semiconductor
Rohs Verified
F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption FRAM (Ferroelectric RAM) FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Check Stock & Lead Times Packaging Options
Cypress Semiconductor
Rohs Verified
The Cypress Semiconductor FM24C04B is a 4-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories. 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 ´ 8 High-endurance 100 trillion (1014) read/writes 151-year data retention NoDelay™ writes Advanced high-reliability ferroelectric process
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Cypress Semiconductor
Rohs Verified
Low power, 8-Mbit nonvolatilememory employing an advanced ferroelectric process. A ferro-electric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities,overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.Unlike serial flash and EEPROM, performs write operations at bus speed. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. Offers substantial write endurance compared to other nonvolatile memories. Capable of supporting 1015 read/write cycles, or 1000 million times morewrite cycles than EEPROM. Ideal for nonvolatile memory applications, requiring frequent or rapid writes. Provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement.
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FAQs

We offer free shipping for orders over £200 if delivery is in the UK. All other orders in the UK, shipping from £7.99 depending on the weight and measurement. Mainland Europe shipping charges start from £25. For all other countries shipping charges start from £50 for products like FRAM Memory and all others.

You can email us directly at sales@enrgtech.co.uk or via our website for any queries regarding FRAM Memory or any other product.

This depends on the FRAM Memory individual product and information that can be found on our website.

Yes, we offer special discounts on orders above £200 for FRAM Memory and all other products.

UK orders normally take between 2/3 working days. International orders normally take between 3/5 working days for all products including FRAM Memory.

Yes. We keep updating our stock frequently and if a product like FRAM Memory is not in stock then we will let you know.