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Showing Results For: FRAM Memory

FRAM Memory

What is FRAM memory?

The FRAM memory is a high-speed nonvolatile memory with unique polarization property, which makes it suitable for storing data even in the smallest spaces. Unlike traditional EEPROM, FRAM does not use pages to store information. This allows it to be written faster than the SPI bus can deliver new information. It makes it a desirable choice for personal and industrial applications. It is a low-power, versatile solution. 

Like any other storage device, the information is stored in a cell and remains there even after the transistor is turned off. Technology is fast enough to write and read one byte every 125 nanoseconds, a thousand times faster than flash storage. For reference, a single application reaching the end of a flash segment can result in a 20-millisecond latency. With this speed, FRAM can reduce latency significantly, resulting in a significant reduction in system costs. As a result, the benefits of FRAM are many.

Benefits:

The advantages of FRAM include;

  • · Its high speed provides more than one trillion read/write cycles and low power consumption. 
  • · It can save billions of dollars in just a few seconds, and its long lifespan and energy efficiency make it a superior alternative to electrically volatile memory. 
  • · It is fast, durable and reliable
  • · Its high-density structure makes it a more efficient storage medium and faster than ROM.
  • · They can maintain their memory for up to 95 years when stored at room temperature.

Types of storage memories:

In addition to the FRAM memory, other types of memory can also be used in smart meters. The 1T1C structure has a higher integration density than the other two, but its reliability is lower. The second type is a hybrid of the 2T1C and 1T1C forms. The one that is most popular among the three is the 1T2C structure. This structure is a compromise between the first two. The first is more flexible, while the other is more robust.

Nonvolatile Memory

The second type of memory is a nonvolatile one. It is made of silicon. The DRAM is limited by its capacity to store and drain charge. The data can be read out only when the battery power fails. In contrast, nonvolatile memory can be erased and reused repeatedly. The third is not durable and has low energy consumption. This is why many DRAMs have limited capacities.

Ferroelectric random-access memory

The third type of memory is called the ferroelectric random-access memory. It uses a ferroelectric film as a capacitor. The dipole is located inside an oxygen octahedron. It is difficult to switch from one polarity to another because of its free electric charge or ionic defects. The fourth type of memory uses magnetoresistive RAM. It is a nonvolatile, permanent memory with unlimited endurance.

Applications of the product: 

A high speed and small size make these devices attractive for many applications. Its high capacity makes it an excellent choice for the automotive industry. This memory is widely used in smartphones and other consumer electronics. Furthermore, they are used to store data in various industrial settings, such as ATMs. It is also commonly used in fax machines and commercial settlement systems. 

Conclusion: 

These high-speed and high-capacity products are widely used in various applications such as smart meters, cameras, and more. It is also compatible with a wide range of systems. If you want to know more, you can contact our experts for the solution.


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FM18W08-SGTR, Infineon
2025 In Stock
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1000 +
£ 6.48
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CY15B064J-SXET, Infineon
5007 In Stock
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2500 +
£ 2.47
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FM24CL64B-DGTR, Infineon
6027 In Stock
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3000 +
£ 2.20
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FM25V02A-GTR, Infineon
5035 In Stock
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2500 +
£ 3.06
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FM28V100-TGTR, Infineon
3039 In Stock
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1500 +
£ 11.40
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CY15B016Q-SXE, Infineon
255 In Stock
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£ 1.42
194 +
£ 1.22
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CY15B102QN-50SXE, Infineon
250 In Stock
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£ 9.32
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CY15B016Q-SXET, Infineon
5006 In Stock
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2500 +
£ 1.11
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FM25640B-GTR, Infineon
5032 In Stock
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2500 +
£ 2.24
Infineon
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FM24V10-GTR, Infineon
5029 In Stock
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£ 8.64
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CY15B064Q-SXET, Infineon
5008 In Stock
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£ 2.47
Infineon
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FM24V05-GTR, Infineon
5028 In Stock
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£ 7.20
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FM25W256-GTR, Infineon
5038 In Stock
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£ 4.10
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CY15B102QN-50SXI, Infineon
251 In Stock
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£ 7.07
188 +
£ 6.23
Infineon
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FM25V05-GTR, Infineon
5036 In Stock
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£ 7.02
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CY15B104QN-50SXA, Infineon
198 In Stock
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£ 16.82
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CY15B128Q-SXE, Infineon
95 In Stock
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£ 4.62
Infineon
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FM16W08-SG, Infineon
83 In Stock
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£ 3.77
108 +
£ 3.40
Infineon
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FM24C16B-G, Infineon
95 In Stock
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£ 1.40
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£ 1.22
Infineon
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FM24CL04B-G, Infineon
279 In Stock
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£ 1.22
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£ 1.06
CY15B004Q-SXE, Infineon
95 In Stock
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£ 1.26
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£ 1.15
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£ 1.26
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FM24CL64B-DG, Infineon
86 In Stock
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£ 2.83
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£ 2.52
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CY15B104Q-LHXIT, Infineon
5009 In Stock
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£ 14.29
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FM24C16B-GTR, Infineon
5026 In Stock
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£ 1.09
Infineon
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FM25V10-GTR, Infineon
5037 In Stock
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FM18W08-SG, Cypress Semiconductor

FM18W08-SG, Cypress Semiconductor

F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption FRAM (Ferroelectric RAM) FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
New items
FM31256-G, Cypress Semiconductor

FM31256-G, Cypress Semiconductor

F-RAM Processor Companion Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory Real-time Clock (RTC) Low Voltage Reset Watchdog Timer Early Power-Fail Warning/NMI Two 16-bit Event Counters Serial Number with Write-lock for Security Battery-backed switchover Event Counter Tracking I²C interface
New items
FM25640B-G, Cypress Semiconductor

FM25640B-G, Cypress Semiconductor

F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption FRAM (Ferroelectric RAM) FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
New items
FM31L276-G, Cypress Semiconductor

FM31L276-G, Cypress Semiconductor

F-RAM Processor Companion Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory Real-time Clock (RTC) Low Voltage Reset Watchdog Timer Early Power-Fail Warning/NMI Two 16-bit Event Counters Serial Number with Write-lock for Security Battery-backed switchover Event Counter Tracking I²C interface
New items
FM24V05-G, Infineon

FM24V05-G, Infineon

F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption
New items
FM25V01A-G, Infineon

FM25V01A-G, Infineon

F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption
New items
FM24W256-G, Infineon

FM24W256-G, Infineon

F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption
New items
FM25W256-G, Infineon

FM25W256-G, Infineon

F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption
New items
FM24V01A-G, Infineon

FM24V01A-G, Infineon

128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K ´ 8 High-endurance 100 trillion (1014) read/writes 151-year data retention NoDelay™ writes Advanced high-reliability ferroelectric process ■ Fast two-wire serial interface (I 2C) Up to 3.4-MHz frequency[1] Direct hardware replacement for serial EEPROM Supports legacy timings for 100 kHz and 400 kHz Device ID Manufacturer ID and Product ID Low power consumption 175-A active current at 100 kHz 150-A standby current 8-A sleep mode current Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature: –40 °C to +85 °C 8-pin small outline integrated circuit (SOIC) package
New items
CY15V104QSN-108SXI, Infineon

CY15V104QSN-108SXI, Infineon

The Infineon Ultra Ferroelectric RAM is non volatile and performs reads and writes operations similar to a RAM. Data is written to the memory array immediately after each byte is successfully transferred to the device. This memory performs write operations at bus speed and having no write delays are incurred. Single and multi IO serial peripheral interface Low power consumption at high speed Dedicated 256 byte special sector Software block protection
New items
FM18W08-SGTR, Infineon

FM18W08-SGTR, Infineon

The Infineon FRAM Memory is a 32 K ´ 8 non volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or FRAM is non volatile, which means that detail retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery backed SRAM. Fast write timing and high write endurance make the FRAM superior to other types of memory. RoHS compliant Low power consumption SRAM and EEPROM compatible Superior to battery backed SRAM modules Resistant to negative voltage undershoots
New items
CY15B108QN-40SXI, Cypress Semiconductor

CY15B108QN-40SXI, Cypress Semiconductor

Low power, 8-Mbit nonvolatilememory employing an advanced ferroelectric process. A ferro-electric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities,overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.Unlike serial flash and EEPROM, performs write operations at bus speed. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. Offers substantial write endurance compared to other nonvolatile memories. Capable of supporting 1015 read/write cycles, or 1000 million times morewrite cycles than EEPROM. Ideal for nonvolatile memory applications, requiring frequent or rapid writes. Provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement.
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You can email us directly at sales@enrgtech.co.uk or via our website for any queries regarding FRAM Memory or any other product.
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Yes, we offer special discounts on orders above £200 for FRAM Memory and all other products.
UK orders normally take between 2/3 working days. International orders normally take between 3/5 working days for all products including FRAM Memory.
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