Infineon SRAM, CY7C1021DV33-10ZSXI- 1Mbit

The Infineon CY7C1021DV33‑10ZSXI is a high-speed, power-efficient memory solution ideal for UK-based electronics, industrial controllers, and embedded systems. Organised as 64 K × 16 bits and housed in a compact TSOP‑II 44-pin package, it offers fast access with a mere 10 ns cycle time. Operating at a nominal 3.3 V (range 3.0–3.6 V) and featuring automatic power-down, it conserves energy when idle.

Why Choose the Infineon 1 Mbit SRAM?

Its automatic CE power-down feature significantly reduces energy use during idle states, while the robust CMOS design supports harsh UK industrial conditions. The TSOP‑II form factor ensures seamless integration into compact PCBs, making this SRAM a wise choice for UK engineers and OEMs seeking high-performance, energy-efficient, and space-conscious memory solutions.

Standout Features and Benefits Include

• Ultra-fast 10 ns access time, minimises latency in time-sensitive applications.
• Automatic power-down significantly reduces idle power draw.
• 3.3 V CMOS operation with data retention down to 2 V enhances energy efficiency.
• Industrial temperature range (-40 °C to +85 °C) ensures longevity in harsh environments.
• Compact TSOP‑II 44-pin package simplifies board layout and saves space.

Product Usage Information

• Real-time buffering in UK industrial automation systems
• Embedded memory for controllers and PLCs
• High-speed data cache in telecoms and instrumentation
• Temporary storage in test and measurement equipment
• Robotics and motion control, where low-latency memory is essential

For more information please check the datasheets.