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The Alliance Memory 4GB eMMC device is a high performance embedded MMC solution designed for embedded NAND flash applications. It supports eMMC/J...
The Alliance Memory 8GB eMMC device is a high performance embedded MMC solution designed for embedded NAND flash applications. It supports eMMC/J...
Static RAM, Alliance Memory SRAM (Static Random Access Memory)
Static RAM, Alliance Memory SRAM (Static Random Access Memory)
The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR). Density: 4Gb...
The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR). Density: 4Gb...
The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR). Density: 4Gb...
The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR). Density: 4Gb...
The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR). Density: 4Gb...
The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 1...
The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 1...
The Alliance Memory 512Mb Double-Data-Rate-3L (DDR3L) DRAMs is double data rate architecture to achieve high-speed operation. It is internally co...
Popular Categories For Alliance Memory
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AS4C16M16SA-7TCN, Alliance Memory
The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented
accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
Fast access time from clock: 5/5.4 ns
Fast clock rate: 166/143 MHz
Fully synchronous operation
Internal pipelined architecture
4M word x 16-bit x 4-bank
Popular items
AS4C16M16SA-7TCNTR, Alliance Memory
The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented
accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
Fast access time from clock: 5/5.4 ns
Fast clock rate: 166/143 MHz
Fully synchronous operation
Internal pipelined architecture
4M word x 16-bit x 4-bank
Popular items
AS4C32M16D3L-12BIN, Alliance Memory
The Alliance Memory 512Mb Double-Data-Rate-3L (DDR3L) DRAMs is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM.
8 internal banks for concurrent operation
8n-bit prefetch architecture
Pipelined internal architecture
Precharge & active power down
Programmable Mode & Extended Mode registers
Popular items
AS6C6416-55TIN, Alliance Memory
The Alliance Memory AS6C6416 is a 67,108,864-bit low power CMOS static random access memory organized as 4,194,304 words by 16 bits or 8,388,608 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.
Fully static operation
Tri-state output
Popular items
ASFC4G31M-51BIN, Alliance Memory
The Alliance Memory 4GB eMMC device is a high performance embedded MMC solution designed for embedded NAND flash applications. It supports eMMC/JEDEC 5.1 industry standard and is backward compatible with eMMC 4.5 & 5.0 version.
Full Backward compatibility
Programmable bus width is 1 bit(Default), 4bit and 8bit Data bus
MMC I/F Clock Frequency is 0 to 200MHz
MMC I/F Boot Frequency is 0 to 52MHz
Operating Temperature is 40 to 85 °C
Operating Power Supply is VCC : 2.7V to 3.6V (for NAND Flash Memory)
VCCQ is 1.7V to 1.95V or 2.7V to 3.6V (for Interface)
Popular items
ASFC8G31M-51BIN, Alliance Memory
The Alliance Memory 8GB eMMC device is a high performance embedded MMC solution designed for embedded NAND flash applications. It supports eMMC/JEDEC 5.1 industry standard and is backward compatible with eMMC 4.5 & 5.0 version.
Full Backward compatibility
Programmable bus width is 1 bit(Default), 4bit and 8bit Data bus
MMC I/F Clock Frequency is 0 to 200MHz
MMC I/F Boot Frequency is 0 to 52MHz
Operating Temperature is 40 to 85 °C
Operating Power Supply is VCC : 2.7V to 3.6V (for NAND Flash Memory)
VCCQ is 1.7V to 1.95V or 2.7V to 3.6V (for Interface)
Popular items
AS6C4008-55TIN, Alliance Memory
Static RAM, Alliance Memory
SRAM (Static Random Access Memory)
Popular items
AS6C62256-55SIN, Alliance Memory
Static RAM, Alliance Memory
SRAM (Static Random Access Memory)
Popular items
AS4C256M16D4-83BCN, Alliance Memory
The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR).
Density: 4Gb
Organization: 256M x 16
Package: 96-ball FBGA
Speed: 1200MHz
Temp. range (°C): -40 to +95
Bidirectional differential data strobe, DQS &DQS#
8 internal banks: 2 groups of 4 banks each
8n-bit pre-fetch architecture
Target Applications:
Portable electronics, such as smartphones and tablets
5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs
Popular items
AS4C256M16D4-83BIN, Alliance Memory
The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR).
Density: 4Gb
Organization: 256M x 16
Package: 96-ball FBGA
Speed: 1200MHz
Temp. range (°C): -40 to +95
Bidirectional differential data strobe, DQS &DQS#
8 internal banks: 2 groups of 4 banks each
8n-bit pre-fetch architecture
Target Applications:
Portable electronics, such as smartphones and tablets
5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs
Popular items
AS4C512M8D4-83BCN, Alliance Memory
The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR).
Density: 4Gb
Organization: 512M x 8
Package: 78-ball FBGA
Speed: 1200MHz
Temp. range (°C): 0 to +95
16 internal banks: 4 groups of 4 banks each
8n-bit pre-fetch architecture
Target Applications:
Portable electronics, such as smartphones and tablets
5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs
Popular items
AS4C512M8D4-83BIN, Alliance Memory
The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR).
Density: 4Gb
Organization: 512M x 8
Package: 78-ball FBGA
Speed: 1200MHz
Temp. range (°C): 0 to +95
16 internal banks: 4 groups of 4 banks each
8n-bit pre-fetch architecture
Target Applications:
Portable electronics, such as smartphones and tablets
5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs
New Items
New items
AS4C16M16SA-7TCN, Alliance Memory
The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented
accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
Fast access time from clock: 5/5.4 ns
Fast clock rate: 166/143 MHz
Fully synchronous operation
Internal pipelined architecture
4M word x 16-bit x 4-bank
New items
AS4C16M16SA-7TCNTR, Alliance Memory
The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented
accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
Fast access time from clock: 5/5.4 ns
Fast clock rate: 166/143 MHz
Fully synchronous operation
Internal pipelined architecture
4M word x 16-bit x 4-bank
New items
AS4C32M16D3L-12BIN, Alliance Memory
The Alliance Memory 512Mb Double-Data-Rate-3L (DDR3L) DRAMs is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM.
8 internal banks for concurrent operation
8n-bit prefetch architecture
Pipelined internal architecture
Precharge & active power down
Programmable Mode & Extended Mode registers
New items
AS6C6416-55TIN, Alliance Memory
The Alliance Memory AS6C6416 is a 67,108,864-bit low power CMOS static random access memory organized as 4,194,304 words by 16 bits or 8,388,608 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.
Fully static operation
Tri-state output
New items
ASFC4G31M-51BIN, Alliance Memory
The Alliance Memory 4GB eMMC device is a high performance embedded MMC solution designed for embedded NAND flash applications. It supports eMMC/JEDEC 5.1 industry standard and is backward compatible with eMMC 4.5 & 5.0 version.
Full Backward compatibility
Programmable bus width is 1 bit(Default), 4bit and 8bit Data bus
MMC I/F Clock Frequency is 0 to 200MHz
MMC I/F Boot Frequency is 0 to 52MHz
Operating Temperature is 40 to 85 °C
Operating Power Supply is VCC : 2.7V to 3.6V (for NAND Flash Memory)
VCCQ is 1.7V to 1.95V or 2.7V to 3.6V (for Interface)
New items
ASFC8G31M-51BIN, Alliance Memory
The Alliance Memory 8GB eMMC device is a high performance embedded MMC solution designed for embedded NAND flash applications. It supports eMMC/JEDEC 5.1 industry standard and is backward compatible with eMMC 4.5 & 5.0 version.
Full Backward compatibility
Programmable bus width is 1 bit(Default), 4bit and 8bit Data bus
MMC I/F Clock Frequency is 0 to 200MHz
MMC I/F Boot Frequency is 0 to 52MHz
Operating Temperature is 40 to 85 °C
Operating Power Supply is VCC : 2.7V to 3.6V (for NAND Flash Memory)
VCCQ is 1.7V to 1.95V or 2.7V to 3.6V (for Interface)
New items
AS6C4008-55TIN, Alliance Memory
Static RAM, Alliance Memory
SRAM (Static Random Access Memory)
New items
AS6C62256-55SIN, Alliance Memory
Static RAM, Alliance Memory
SRAM (Static Random Access Memory)
New items
AS4C256M16D4-83BCN, Alliance Memory
The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR).
Density: 4Gb
Organization: 256M x 16
Package: 96-ball FBGA
Speed: 1200MHz
Temp. range (°C): -40 to +95
Bidirectional differential data strobe, DQS &DQS#
8 internal banks: 2 groups of 4 banks each
8n-bit pre-fetch architecture
Target Applications:
Portable electronics, such as smartphones and tablets
5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs
New items
AS4C256M16D4-83BIN, Alliance Memory
The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR).
Density: 4Gb
Organization: 256M x 16
Package: 96-ball FBGA
Speed: 1200MHz
Temp. range (°C): -40 to +95
Bidirectional differential data strobe, DQS &DQS#
8 internal banks: 2 groups of 4 banks each
8n-bit pre-fetch architecture
Target Applications:
Portable electronics, such as smartphones and tablets
5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs
New items
AS4C512M8D4-83BCN, Alliance Memory
The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR).
Density: 4Gb
Organization: 512M x 8
Package: 78-ball FBGA
Speed: 1200MHz
Temp. range (°C): 0 to +95
16 internal banks: 4 groups of 4 banks each
8n-bit pre-fetch architecture
Target Applications:
Portable electronics, such as smartphones and tablets
5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs
New items
AS4C512M8D4-83BIN, Alliance Memory
The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR).
Density: 4Gb
Organization: 512M x 8
Package: 78-ball FBGA
Speed: 1200MHz
Temp. range (°C): 0 to +95
16 internal banks: 4 groups of 4 banks each
8n-bit pre-fetch architecture
Target Applications:
Portable electronics, such as smartphones and tablets
5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs
Don’t hesitate to ask questions for better clarification.