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SRAM
What is Static Random Access Memory (SRAM)?
SRAM, or Static Random Access Memory, is an electronic semiconductor memory that makes use of a bistable latching circuit, commonly referred to as flip-flops to preserve each and every bit of information in the memory. It preserves data bits on the memory circuitry until the power supply is cut off.
Static Random Access Memory is employed in the system where speed or low power are required. Its density is higher than that of dynamic random-access memory. This type of memory configuration is not complex, and it becomes ideal for use with semiconductor memory modules.
Difference between SRAM and DRAM:
Since this memory practices high-capacity storage and is integrated into the embedded system, Static Random Access Memory differs from DRAM (dynamic RAM, which stores bits in cells made up of a capacitor and a transistor) in that it does not require frequent refreshing, whereas dynamic will lose data if not. Static Random Access Memory is also more expensive and speedier than DRAM.
Features and Benefits
- Access Transistors such as MAL and MAR provide access to preserved data for reading and writing operations.
- Three operational stages are carried out in memory names hold, read, and write.
- Bistable (cross-coupled) INVs for storage.
- Word line, WL, controls access – WL=0 (hold operation), WL=1 (read/write operation).
- Reliable chip for long data lifetime.
- Data is held statically—semiconductor memory is being used to preserve the data, regardless of refreshing the data after each read data operation until the power is cut off to the memory.
What are the applications of SRAM?
They are widely used in various environments with a multitude of devices, such as:
- Electronics
- Routers
- Workstations
- LCD screens and printers
- Microprocessors
- Computers
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New Items
New items
CY7C1021DV33-10ZSXIT, Infineon
Temperature ranges
Industrial: –40 °C to 85 °C
Automotive-A: –40 °C to 85 °C
Pin-and function-compatible with CY7C1021CV33
High speed
tAA = 10 ns
Low active power
ICC = 60 mA @ 10 ns
Low CMOS standby power
ISB2 = 3 mA
2.0 V data retention
Automatic power-down when deselected
CMOS for optimum speed/power
Independent control of upper and lower bits
Available in Pb-free 44-pin 400-Mil wide molded SOJ, 44-pin TSOP II and 48-ball VFBGA packages
New items
R1LP0108ESA-5SI#B1, Renesas Electronics
Low Power SRAM, R1LP Series, Renesas Electronics
The R1LP Series of advanced low voltage static RAMs is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives.
Single 4.5V to 5.5V power supply
Small stand-by current
No clocks, No refresh required
All inputs and outputs are TTL compatible
SRAM (Static Random Access Memory)
New items
RMLV0816BGSD-4S2#AC0, Renesas Electronics
Low Power SRAM, RMLV Series, Renesas Electronics
The RMLV Series of high performance advanced static RAMs has realized higher density, low current consumption, and offers low power standby power dissipation.
Single 2.7V to 3.6V power supply
Access time: 45ns (max.)
Equal access and cycle times
Common data input and output with three state output
All inputs and outputs are TTL compatible
Suitable for battery backup operation
SRAM (Static Random Access Memory)
New items
New items
CY621472E30LL-45ZSXI, Infineon
Very high speed: 45 ns
Temperature range
Industrial: –40 °C to +85 °C
Wide voltage range: 2.20 V to 3.60 V
Ultra low standby power
Typical standby current: 1 A
Maximum standby current: 7 A (Industrial)
Ultra low active power
Typical active current: 2 mA at f = 1 MHz
Easy memory expansion with CE1, CE2, and OE Features
Automatic power down when deselected
Complementary metal oxide semiconductor (CMOS) for optimum speed and power
Available in Pb-free 44-pin thin small outline package (TSOP) II package
Byte power down feature
New items
CY7C1345G-100AXC, Infineon
The Cypress Semiconductor CY7C1345G series is a 128K
´
36 synchronous cache RAM designed to interface with high speed microprocessors with minimum glue logic. The maximum access delay from clock rise is 8.0 ns. A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access.
Provide high performance 2-1-1-1 access rate
User selectable burst counter supporting Intel Pentium interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self timed write
Asynchronous output enable
Available in Pb-free 100-pin TQFP package
ZZ sleep mode option
New items
CY7C1354C-166AXC, Infineon
The Cypress Semiconductor CY7C1354C series are 3.3V, 256K
´
36 synchronous pipelined burst SRAMs with no bus latency logic, respectively. They are designed to support unlimited true back-to-back read/write operations with no wait states. It is equipped with the advanced logic required to enable consecutive read/write operations with data being transferred on every clock cycle.
Pin-compatible and functionally equivalent to ZBT
Supports 250 MHz bus operations with zero wait states
Available speed grades are 250, 200, and 166 MHz
Internally self-timed output buffer control to eliminate the need to use asynchronous OE
Fully registered for pipelined operation
Byte write capability
New items
CY7C1354C-166AXI, Infineon
The Cypress Semiconductor CY7C1354C series are 3.3V, 256K
´
36 synchronous pipelined burst SRAMs with no bus latency logic, respectively. They are designed to support unlimited true back-to-back read/write operations with no wait states. It is equipped with the advanced logic required to enable consecutive read/write operations with data being transferred on every clock cycle.
Pin-compatible and functionally equivalent to ZBT
Supports 250 MHz bus operations with zero wait states
Available speed grades are 250, 200, and 166 MHz
Internally self-timed output buffer control to eliminate the need to use asynchronous OE
Fully registered for pipelined operation
Byte write capability
New items
71V416L12PHGI, Renesas Electronics
The Renesas Electronics Static RAM is of 4,194,304-bit high-speed organized as 256K x 16. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high speed memory needs.
It has an output enable pin which operates as fast as 5ns with address access times as fast as 10ns
All bidirectional inputs and outputs of the IDT71V416 are LVTTL-compatible
Fully static asynchronous circuitry is used requiring no clocks or refresh for operation
It has JEDEC centre power / GND pinout for reduced noise
Provides bidirectional data inputs and outputs directly
Low power consumption via chip deselect
New items
71V424S12PHGI, Renesas Electronics
The Renesas Electronics Static RAM is of 4,194,304-bit high-speed organized as 512K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state of the art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.
It has an output enable pin which operates as fast as 5ns with address access times as fast as 10ns
All bidirectional inputs and outputs of the IDT71V424 are TTL-compatible
It provides JEDEC Centre Power / GND pinout for reduced noise
Low power consumption via chip deselect
Industrial temperature range of –40°C to +85°C is available for selected speeds
New items
CY62137FV30LL-45BVXI, Cypress Semiconductor
Asynchronous Static RAM Memory, Cypress Semiconductor
SRAM (Static Random Access Memory)