What are the shipping charges for products like SDRAM?

Yes. We keep updating our stock frequently and if a product like SDRAM is not in stock then we will let you know.

How do I contact the Customer Support Team?

Yes. We keep updating our stock frequently and if a product like SDRAM is not in stock then we will let you know.

Where are your products like SDRAM manufactured?

Yes. We keep updating our stock frequently and if a product like SDRAM is not in stock then we will let you know.

Do you offer any discounts on bulk orders of products like SDRAM?

Yes. We keep updating our stock frequently and if a product like SDRAM is not in stock then we will let you know.

How long will it take to receive the order that I placed for SDRAM?

Yes. We keep updating our stock frequently and if a product like SDRAM is not in stock then we will let you know.

Are your products SDRAM in stock?

Yes. We keep updating our stock frequently and if a product like SDRAM is not in stock then we will let you know.

SDRAM With Exceptional Quality Available Online With Speedy Delivery

New items

MT48LC16M16A2P-6A:G, Micron

Dynamic RAM, Micron Technology

Product Detail

New items

AS4C16M16SA-7TCN, Alliance Memory

The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. Fast access time from clock: 5/5.4 ns Fast clock rate: 166/143 MHz Fully synchronous operation Internal pipelined architecture 4M word x 16-bit x 4-bank

Product Detail

New items

AS4C16M16SA-7TCNTR, Alliance Memory

The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. Fast access time from clock: 5/5.4 ns Fast clock rate: 166/143 MHz Fully synchronous operation Internal pipelined architecture 4M word x 16-bit x 4-bank

Product Detail

New items

AS4C32M16D3L-12BIN, Alliance Memory

The Alliance Memory 512Mb Double-Data-Rate-3L (DDR3L) DRAMs is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM. 8 internal banks for concurrent operation 8n-bit prefetch architecture Pipelined internal architecture Precharge & active power down Programmable Mode & Extended Mode registers

Product Detail

New items

AS4C256M16D4-83BIN, Alliance Memory

The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR). Density: 4Gb Organization: 256M x 16 Package: 96-ball FBGA Speed: 1200MHz Temp. range (°C): -40 to +95 Bidirectional differential data strobe, DQS &DQS# 8 internal banks: 2 groups of 4 banks each 8n-bit pre-fetch architecture Target Applications: Portable electronics, such as smartphones and tablets 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

Product Detail

New items

AS4C512M8D4A-75BIN, Alliance Memory

The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR). Density: 4Gb Organization: 512M x 8 Package: 78-ball FBGA Speed: 1333MHz Temp. range (°C): 0 to +95 JEDEC Standard Compliant Bidirectional differential data strobe, DQS &DQS# 8n-bit pre-fetch architecture Target Applications: Portable electronics, such as smartphones and tablets 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

Product Detail

New items

MT48LC8M16A2P-6A :L, Micron

Dynamic RAM, Micron Technology

Product Detail

New items

AS4C32M16SB-7TCN, Alliance Memory

The Alliance Memory 512Mb SDRAM is a high-speed CMOS synchronous DRAM containing 512 Mbits. It is internally configured as 4 Banks of 8M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a Bank Activate command which is then followed by a Read or Write command. Auto Refresh and Self Refresh 8192 refresh cycles/64ms CKE power down mode Single +3.3V ±0.3V power supply

Product Detail

New items

AS4C512M8D4A-75BCN, Alliance Memory

The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR). Density: 4Gb Organization: 512M x 8 Package: 78-ball FBGA Speed: 1333MHz Temp. range (°C): 0 to +95 JEDEC Standard Compliant Bidirectional differential data strobe, DQS &DQS# 8n-bit pre-fetch architecture Target Applications: Portable electronics, such as smartphones and tablets 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

Product Detail

New items

AS4C128M16D2A-25BCN, Alliance Memory

The Alliance Memory 2Gb DDR2 is a high-speed CMOS Double-Data- Rate-Two (DDR2), synchronous dynamic random - access memory (SDRAM) containing 2048 Mbits in a 16- bit wide data I/Os. It is internally configured as a 8-bank DRAM, 8 banks x 16Mb addresses x 16 I/Os. The device is designed to comply with DDR2 DRAM key features such as posted CAS# with additive latency, Write latency = Read latency -1, Off-Chip Driver (OCD) impedance adjustment, and On Die Termination(ODT). 8 internal banks for concurrent operation 4-bit prefetch architecture Internal pipeline architecture Precharge & active power down Programmable Mode & Extended Mode registers

Product Detail

New items

AS4C16M16SA-6TCN, Alliance Memory

The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. Fast access time from clock: 5/5.4 ns Fast clock rate: 166/143 MHz Fully synchronous operation Internal pipelined architecture 4M word x 16-bit x 4-bank

Product Detail

New items

AS4C16M16SA-6TINTR, Alliance Memory

The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. Fast access time from clock: 5/5.4 ns Fast clock rate: 166/143 MHz Fully synchronous operation Internal pipelined architecture 4M word x 16-bit x 4-bank

Product Detail