Enrgtech

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W25M02GVZEIG/TUBE, Winbond

W25M02GVZEIG/TUBE, Winbond

2Gb Serial NAND Flash Memory with uniform 2KB+64B page size and set Buffer Read Mode as default Vcc: 2.7V to 3.6V Bus width: x1/x2/x4 Operating temperature: Industrial: -40°C to 85°C Single-Level Cell (SLC) Technology Density: 2G-bit/256M-byte Page size: 2,112 bytes (2048 + 64 bytes) Block size: 64 pages (128K + 4K bytes) Page read with ECC enable: 50us SPI clocks: 104MHz Page program time: 250us(typ.) Block erase time: 2ms(typ.) Support OTP memory area
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W25Q64JVZPIQ/TUBE, Winbond

W25Q64JVZPIQ/TUBE, Winbond

64M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI Single/Dual/Quad SPI operations Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 32,768 pages (256 bytes), page program in 0.7mS (typ.) Continuous Read with 8/16/32/64 Byte Wrap Clock operation up to 104MHz (266/532MHz equivalent with Dual/Quad SPI) 2.7 to 3.6V power supply -40° to +85°C operating range Program/Erase Suspend/Resume, Suspend Status Bit Factory-programmed unique ID Electronic ID with Dual/Quad I/O, Hardware and software write protection for top or bottom blocks Volatile & Non-volatile Status Register Bits Lock-Down and OTP protection Serial Flash Discoverable Parameters(SFDP) 3X256byte Security Registers with OTP locks Complement Array Protection Bit Individual Block/Sector Write Protection Software Reset & Configurable hardware/RESET pin Programmable output driver strength
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W9725G6KB-25/TRAY, Winbond

W9725G6KB-25/TRAY, Winbond

The W9725G6KB is a 256M bits DDR2 SDRAM, and speed involving -18, -25, 25I and -3 Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS and /DQS ) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK and /CLK) Data masks (DM) for write data Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality Auto-precharge operation for read and write bursts Auto Refresh and Self Refresh modes Precharged Power Down and Active Power Down