What are the shipping charges for products like SDRAM?

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Where are your products like SDRAM manufactured?

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Do you offer any discounts on bulk orders of products like SDRAM?

Yes. We keep updating our stock frequently and if a product like SDRAM is not in stock then we will let you know.

How long will it take to receive the order that I placed for SDRAM?

Yes. We keep updating our stock frequently and if a product like SDRAM is not in stock then we will let you know.

Are your products SDRAM in stock?

Yes. We keep updating our stock frequently and if a product like SDRAM is not in stock then we will let you know.

SDRAM With Exceptional Quality Available Online With Speedy Delivery

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RTL-SDR, KrakenSDR

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AS4C16M16SA-7TCN, Alliance Memory

The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. Fast access time from clock: 5/5.4 ns Fast clock rate: 166/143 MHz Fully synchronous operation Internal pipelined architecture 4M word x 16-bit x 4-bank

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AS4C16M16SA-7TCNTR, Alliance Memory

The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. Fast access time from clock: 5/5.4 ns Fast clock rate: 166/143 MHz Fully synchronous operation Internal pipelined architecture 4M word x 16-bit x 4-bank

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AS4C32M16D3L-12BIN, Alliance Memory

The Alliance Memory 512Mb Double-Data-Rate-3L (DDR3L) DRAMs is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM. 8 internal banks for concurrent operation 8n-bit prefetch architecture Pipelined internal architecture Precharge & active power down Programmable Mode & Extended Mode registers

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AS4C256M16D4-83BCN, Alliance Memory

The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR). Density: 4Gb Organization: 256M x 16 Package: 96-ball FBGA Speed: 1200MHz Temp. range (°C): -40 to +95 Bidirectional differential data strobe, DQS &DQS# 8 internal banks: 2 groups of 4 banks each 8n-bit pre-fetch architecture Target Applications: Portable electronics, such as smartphones and tablets 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

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AS4C256M16D4-83BIN, Alliance Memory

The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR). Density: 4Gb Organization: 256M x 16 Package: 96-ball FBGA Speed: 1200MHz Temp. range (°C): -40 to +95 Bidirectional differential data strobe, DQS &DQS# 8 internal banks: 2 groups of 4 banks each 8n-bit pre-fetch architecture Target Applications: Portable electronics, such as smartphones and tablets 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

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AS4C512M8D4-83BCN, Alliance Memory

The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR). Density: 4Gb Organization: 512M x 8 Package: 78-ball FBGA Speed: 1200MHz Temp. range (°C): 0 to +95 16 internal banks: 4 groups of 4 banks each 8n-bit pre-fetch architecture Target Applications: Portable electronics, such as smartphones and tablets 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

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AS4C512M8D4-83BIN, Alliance Memory

The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR). Density: 4Gb Organization: 512M x 8 Package: 78-ball FBGA Speed: 1200MHz Temp. range (°C): 0 to +95 16 internal banks: 4 groups of 4 banks each 8n-bit pre-fetch architecture Target Applications: Portable electronics, such as smartphones and tablets 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

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AS4C512M8D4A-75BIN, Alliance Memory

The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR). Density: 4Gb Organization: 512M x 8 Package: 78-ball FBGA Speed: 1333MHz Temp. range (°C): 0 to +95 JEDEC Standard Compliant Bidirectional differential data strobe, DQS &DQS# 8n-bit pre-fetch architecture Target Applications: Portable electronics, such as smartphones and tablets 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

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MT48LC16M16A2P-6A:G, Micron

Dynamic RAM, Micron Technology

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W979H6KBVX2I, Winbond

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W9725G6KB-25/TRAY, Winbond

The W9725G6KB is a 256M bits DDR2 SDRAM, and speed involving -18, -25, 25I and -3 Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS and /DQS ) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK and /CLK) Data masks (DM) for write data Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality Auto-precharge operation for read and write bursts Auto Refresh and Self Refresh modes Precharged Power Down and Active Power Down

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