What are the shipping charges for products like SDRAM?

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Where are your products like SDRAM manufactured?

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Do you offer any discounts on bulk orders of products like SDRAM?

Yes. We keep updating our stock frequently and if a product like SDRAM is not in stock then we will let you know.

How long will it take to receive the order that I placed for SDRAM?

Yes. We keep updating our stock frequently and if a product like SDRAM is not in stock then we will let you know.

Are your products SDRAM in stock?

Yes. We keep updating our stock frequently and if a product like SDRAM is not in stock then we will let you know.

SDRAM With Exceptional Quality Available Online With Speedy Delivery

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MT48LC16M16A2P-6A:G, Micron

Dynamic RAM, Micron Technology

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AS4C16M16SA-7TCN, Alliance Memory

The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. Fast access time from clock: 5/5.4 ns Fast clock rate: 166/143 MHz Fully synchronous operation Internal pipelined architecture 4M word x 16-bit x 4-bank

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AS4C16M16SA-7TCNTR, Alliance Memory

The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. Fast access time from clock: 5/5.4 ns Fast clock rate: 166/143 MHz Fully synchronous operation Internal pipelined architecture 4M word x 16-bit x 4-bank

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AS4C32M16D3L-12BIN, Alliance Memory

The Alliance Memory 512Mb Double-Data-Rate-3L (DDR3L) DRAMs is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM. 8 internal banks for concurrent operation 8n-bit prefetch architecture Pipelined internal architecture Precharge & active power down Programmable Mode & Extended Mode registers

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AS4C256M16D4-83BCN, Alliance Memory

The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR). Density: 4Gb Organization: 256M x 16 Package: 96-ball FBGA Speed: 1200MHz Temp. range (°C): -40 to +95 Bidirectional differential data strobe, DQS &DQS# 8 internal banks: 2 groups of 4 banks each 8n-bit pre-fetch architecture Target Applications: Portable electronics, such as smartphones and tablets 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

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AS4C256M16D4-83BIN, Alliance Memory

The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR). Density: 4Gb Organization: 256M x 16 Package: 96-ball FBGA Speed: 1200MHz Temp. range (°C): -40 to +95 Bidirectional differential data strobe, DQS &DQS# 8 internal banks: 2 groups of 4 banks each 8n-bit pre-fetch architecture Target Applications: Portable electronics, such as smartphones and tablets 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

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AS4C512M8D4A-75BIN, Alliance Memory

The Alliance Memory synchronous DRAM with DDR4 memory class. It is JEDEC standard compliant and low-power auto self refresh (LPASR). Density: 4Gb Organization: 512M x 8 Package: 78-ball FBGA Speed: 1333MHz Temp. range (°C): 0 to +95 JEDEC Standard Compliant Bidirectional differential data strobe, DQS &DQS# 8n-bit pre-fetch architecture Target Applications: Portable electronics, such as smartphones and tablets 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

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AS4C256M16D3LC-12BIN, Alliance Memory

The Alliance Memory Synchronous DRAM is based on a double data rate architecture to achieve high-speed operation and is internally configured as eight banks. The 4Gb chip is organized as 32Mbit x 16 I/Os across 8 banks. It supports double-data-rate transfer speeds up to 1866 Mb/sec per pin for general applications. The design complies with DDR3L standards, with all control and address inputs synchronized to a pair of externally supplied differential clocks. Fully synchronous operation 8 internal banks for concurrent operation Pipelined internal architecture Precharge and active power down

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IME5132SDBETG-6I, Intelligent Memory

The Intelligent Memory Four bank Synchronous DRAM organized as 4 banks x 4Mbit x 32. It achieves high-speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and synchronizes the output data to the system clock, ensuring efficient and reliable performance. Power down mode Auto refresh and self refresh Automatic and controlled precharge command

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IME1G08D2DEBG-25I, Intelligent Memory

The Intelligent Memory Eight bank DDR DRAM is organized as 8 banks x 16Mbit x 8 or 8 banks x 8Mbit x 16. It achieves high-speed data transfer rates by using a chip architecture that prefetches multiple bits and synchronizes the output data with the system clock. Automatic and controlled precharge command Power down mode Auto refresh and self refresh

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IM2G16D3FDBG-125I, Intelligent Memory

The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability. Programmable burst length and CAS latency Auto refresh and self refresh Write leveling

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IM4G16D3FDBG-107I, Intelligent Memory

The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability. Programmable burst length and CAS latency Auto refresh and self refresh Write leveling

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