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Showing Results For: SDRAM

SDRAM

SDRAM, abbreviated as Synchronous Dynamic Random Access Memory, is a DRAM semiconductor memory that can operate faster than conventional DRAM. It is popularly utilized as the random-access memory in a computer. SDRAM is synchronized with the clock speed for which the microprocessor is optimized. The speed of SDRAM is measured in MHz and not in nanoseconds (ns). This makes it less complicated to calculate the bus speed and the RAM chip speed. The RAM clock speed can be converted into nanoseconds...

SDRAM, abbreviated as Synchronous Dynamic Random Access Memory, is a DRAM semiconductor memory that can operate faster than conventional DRAM. It is popularly utilized as the random-access memory in a computer. SDRAM is synchronized with the clock speed for which the microprocessor is optimized. The speed of SDRAM is measured in MHz and not in nanoseconds (ns). This makes it less complicated to calculate the bus speed and the RAM chip speed. The RAM clock speed can be converted into nanoseconds by dividing the chip's speed by 1. For example, an 83 MHz RAM would be equal to 12 ns. 

SDRAM has been widely utilized in computers and related technology; after the introduction of SDRAM, several generations of double data rate RAM were developed like DDR, also known as DDR1. DDR2, DDR3, DDR4, and DDR5….

SDRAM became so popular after its introduction in 1996 that it has exceeded the use of DRAM in computers as the main form of dynamic RAM used across the computing spectrum, particularly for random access memory.

Development of SDRAM

The initial ideas of SDRAM were introduced in the 1970s and have been in existence for many years. One of the first commercial SDRAM introduced was KM48SL2000 by Samsung in 1993. This did not immediately become popular. However, it was relatively quick to establish once the idea was established.

As the speed of SDRAM was improved, in 2000, SDRAM had virtually replaced the standard DRAM technology in most computer applications. To ensure that SDRAM technology is interchangeable, the industry body for semiconductor standards, JEDEC, utilized its first SDRAM standard in 1993. This created an open standard for SDRAM. It also made it easier for the developers to use the product from more than one manufacturer and still have a second source option.

When the basic SDRAM was established, further developments took place. JEDEC established a type of SDRAM known as DDR or double date rat according to their developed standard 79C, which was updated later on into two more versions. 

After DDR SDRAM, another option known as DDR2 SDRAM was developed in 2003 when two clock rates were available. It was considered that the version of DDR2 SDRAM was inferior to the previous version of DDR SDRAM. However, as its speed increased, the performance exceeded that of DDR SDRAM. Later on, the next version, DDR3 SDRAM, was released. Its prototype was announced in 2005. However, it was 2007 when it initially started being used by the computer motherboard.

Advantages and Disadvantages

It is crucial to know about the advantages and disadvantages of any technology before you decide to use it in any electronic circuit design or project. SDRAM has been popular in the market for several computer memory applications and particularly for RAM. The advantages of SDRAM are as follows:

  • Simple design
  • Low cost
  • Speed
  • The complex manufacturing process required
  • DDR versions of SDRAM double the data rate of basic SDRAM by utilizing both edges of the clock cycle

Besides the advantages, SDRAM has its disadvantages in certain applications as well:

  • High consumption of power
  • This memory is volatile and loses its memory once the power is removed.
  • Data needs refreshing
  • It is slower than the SRAM.

When choosing any memory, whether random access memory or any other functions, it is crucial to consider both advantages and disadvantages.


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Alliance Memory
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Synchronous DRAM, Alliance Memory
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Alliance Memory
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The Alliance Memory AS4C64M16D2A is a high-speed CMOS Double-Data-Rate-Two (DDR2), synchronous dynamic random- access memory (SDRAM) containing 1024 Mbits in a 16-bit wide data I/Os. It is internally configured as a 8-bank DRAM, 8 banks x 8Mb addresses x 16 I/Os. The device is designed to comply with DDR2 DRAM key features such as posted CAS# with additive latency, Write latency = Read latency -1, Off-Chip Driver (OCD) impedance adjustment, and On Die Termination(ODT). Supports JEDEC clock jitter specification Fully synchronous operation Fast clock rate: 400 MHz Differential Clock, CK & CK# Bidirectional single/differential data strobe DQS & DQS# 8 internal banks for concurrent operation 4-bit prefetch architecture Inte
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Alliance Memory
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Synchronous DRAM, Alliance Memory
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Dynamic RAM, ISSI ISSI SDR SDRAM range offers synchronous interface with programmable CAS Latency (2/3 clocks). High speed data transfer is achieved using the pipeline process and the Synchronous DRAM SDR series offer burst read/write and burst read/single write making them ideally for use in computers applications. ISSI ’s SDR SDRAM devices come in a range of different organisations and memory sizes, operating on a 3.3V power supply. LVTTL interface Input/output signals refer to the rising edge of the clock input Programmable burst sequence: Sequential/Interleave; Programmable burst length Random column address every clock cycle Self-refresh and Auto Refresh mode
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Cypress Semiconductor
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The Cypress Semiconductor S27KL0642/S27KS0642 is a 64 Mb HyperRAM which is a high-speed CMOS, self-refresh DRAM, with Hyper Bus interface. The array of the DRAM uses dynamic cells that require periodic refresh. The refresh control logic which is within the device, manages the refresh operations on the DRAM array when the memory is not being actively read or written by the Hyper Bus interface master (host). The DRAM array appears to the host as though the memory uses static cells that retain data without refresh, as the host is not required to manage any refresh operations. Hence, this memory is more accurately called or can be described as Pseudo Static RAM (PSRAM). Temperature Range: -40°C to +85°C Interface Bandwidth (MBps): 400MBps RoHS Compliant
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Alliance Memory
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The Alliance Memory 128Mb SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. Auto Refresh and Self Refresh 4096 refresh cycles/64ms CKE power down mode Single +3.3V  0.3V power supply Interface: LVTTL
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FAQs

We offer free shipping for orders over £200 if delivery is in the UK. All other orders in the UK, shipping from £7.99 depending on the weight and measurement. Mainland Europe shipping charges start from £25. For all other countries shipping charges start from £50 for products like SDRAM and all others.

You can email us directly at sales@enrgtech.co.uk or via our website for any queries regarding SDRAM or any other product.

This depends on the SDRAM individual product and information that can be found on our website.

Yes, we offer special discounts on orders above £200 for SDRAM and all other products.

UK orders normally take between 2/3 working days. International orders normally take between 3/5 working days for all products including SDRAM.

Yes. We keep updating our stock frequently and if a product like SDRAM is not in stock then we will let you know.