Products Found: 1000
Showing Results For: IGBTs
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Infineon
IRG8P50N120KD-EPBF, Infineon
78 In Stock
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£ 9.69
5 +
£ 9.02
25 +
£ 8.35
Infineon
PVX6012PBF, Infineon
48 In Stock
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£ 8.28
5 +
£ 7.92
10 +
£ 7.63
Infineon
AUIRGP35B60PD-E, Infineon
79 In Stock
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25 +
£ 6.27
Infineon
IRGP4760DPBF, Infineon
52 In Stock
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£ 4.23
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£ 4.11
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£ 3.99
Infineon
IRGP50B60PD1PBF, Infineon
102 In Stock
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£ 6.64
13 +
£ 6.00
Infineon
IRGP6640D-EPBF, Infineon
86 In Stock
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£ 1.90
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£ 1.86
Infineon
IKP15N65H5XKSA1, Infineon
398 In Stock
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£ 1.63
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£ 1.30
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£ 1.22
Littelfuse
MG06400D-BN4MM, Littelfuse
71 In Stock
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30 +
£ 87.08
Infineon
IRG4PC30UDPBF, Infineon
85 In Stock
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25 +
£ 3.81
Infineon
IRGB15B60KDPBF, Infineon
90 In Stock
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50 +
£ 1.73
Infineon
IRGP20B120U-EP, Infineon
94 In Stock
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Infineon
IRGB4062DPBF, Infineon
91 In Stock
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50 +
£ 3.87
50 +
£ 3.87
Infineon
IRGB4615DPBF, Infineon
92 In Stock
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£ 1.75
250 +
£ 1.59
500 +
£ 1.55
Infineon
IRGPS4067DPBF, Infineon
104 In Stock
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25 +
£ 11.21
Semikron
SKM145GB066D, Semikron
3 In Stock
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£ 75.26
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£ 71.51
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£ 62.38
Semikron
SKM400GB126D, Semikron
3 In Stock
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£ 278.03
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£ 264.13
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£ 251.06
Fairchild Semiconductor
HGTG40N60A4, Fairchild Semiconductor
66 In Stock
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30 +
£ 8.93
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£ 7.75
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£ 7.37
Fuji Electric
6MBi450V-120-50, Fuji Electric
15 In Stock
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1 +
£ 393.95
1 +
£ 393.95
Infineon
IRG4PC50UPBF, Infineon
95 In Stock
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25 +
£ 4.36
125 +
£ 3.79
250 +
£ 3.62
Semikron
SK25GAL063, Semikron
84 In Stock
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1 +
£ 17.47
Infineon
IRGP4066D-EPBF, Infineon
97 In Stock
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25 +
£ 4.76
50 +
£ 4.57
125 +
£ 4.46
Infineon
IRG4IBC30UDPBF, Infineon
20 In Stock
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1 +
£ 2.85
Infineon
IRGP6690DPBF, Infineon
103 In Stock
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25 +
£ 6.30
Infineon
IRGSL4B60KD1PBF, Infineon
106 In Stock
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50 +
£ 1.24
Infineon
IRGP4750DPBF, Infineon
100 In Stock
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25 +
£ 4.85
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Popular Items
Popular items
FGW75N60HD, Fuji Electric
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Popular items
RGTH00TS65GC11, ROHM
Low Collector - Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Built in Very Fast & Soft Recovery FRD (RFN - Series)Pb - free Lead Plating, RoHS Compliant
Popular items
RGTH40TK65GC11, ROHM
Low Collector-Emitter Saturation Voltage
High Speed Switching
Low Switching Loss & Soft Switching
Pb-free Lead Plating, RoHS Compliant
Popular items
RGT16TM65DGC9, ROHM
RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5μs
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Popular items
6MBP30XSD060-50-P, Fuji Electric
Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT with the high-voltage/high-current handling capabilities of a bipolar transistor.
Reduces power dissipation to contribute to energy saving
Achieves equipment size reduction
Contributes to improving equipment reliability
IPM come equipped with control IC possessing IGBT drive circuits and protection circuits, and therefore, it is easy to design peripheral circuits and possible to ensure high system reliability. It is suitable for applications such as those utilizing AC servos, air conditioning equipment, and elevators. Small capacity IPM with a product line-up ranging from 15A to 30A/600V and V-IPM covering a capacity of up to 400A/600V and 200A/1200V are available. The IPM come equipped with overcurrent protection, short circuit protection, control power voltage drop protection, and overheating protection, while also outputting alarm signals.
Low-Side Igbts Are Separate Emiitter Type
Short Circuit Protection
Temperature Sensor Output Functoin
Under Voltage Protection
Fault Signal Output Function
Input Interface :TTL (3.3v/5V) Active High Logic
Popular items
GT30J121(Q), Toshiba
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Popular items
IRG4BC30FDPBF, Infineon
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Popular items
HGTG30N60C3D, Fairchild Semiconductor
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Popular items
IKP40N65H5XKSA1, Infineon
The Infineon 650v fifth generation duopack insulated-gate bipolar transistor and diode of high speed switching series in trenchstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Popular items
IRG4PH50UDPBF, Infineon
Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Popular items
IKWH40N65WR6XKSA1, Infineon
The Infineon's 40 A reverse conducting TRENCHSTOP 5 WR6 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creep age distances.
Monolithically integrated diode
Lowest switching losses
Improved reliability against package contamination
Popular items
FF450R12ME7B11BPSA1, Infineon
The Infineon has EconoDUAL 1200 V, 450 A dual TRENCHSTOP IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. This module has high inter-connection reliability and suitable for press-in and soldering process.
High power density
Isolated base plate
Standard housing
New Items
New items
New items
IKW40N60H3FKSA1, Infineon
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStopâ„¢ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
RGCL60TS60GC13, ROHM
ROHM Field Stop Trench IGBT has a low VCEsat. It contributes to energy saving high efficiency and a wide range of high voltage and high current applications.
Low Collector Emitter Saturation Voltage
Soft Switching
Pb free Lead Plating and RoHS Compliant
New items
IKW25N120T2FKSA1, Infineon
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStopâ„¢ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
PSS20S92F6-AG, Mitsubishi Electric
The Mitsubishi Electric 20A, 600V dual-in-line package intelligent power module has 6 pack of connection with driver. It control supply under -voltage protection and short circuit protection. It used 3 phase DC/AC inverter and
N side IGBT open emitter
Built-in bootstrap diode with current limiting resistor
New items
NXH40T120L3Q1SG, onsemi
The NXH40T120L3Q1PG/SG is a case power module containing a three channel T-type neutral-point clamped (TNPC) circuit. Each channel has a two 1200 V, 40 A IGBTs with inverse diodes and two 650 V, 25 A IGBTs with inverse diodes. The module contains an NTC thermistor
Fast switching 1200V and 650V IGBTs with low VCESAT
Improved efficiency over alternative solutions
Options with press-fit pins and solder pins
Wider choices for module mounting process
Applications
DC-AC Conversion
New items
New items
FS950R08A6P2BBPSA1, Infineon
The infineon IGBT module drive is a very compact six-pack module (750 V/950 A) optimized for hybridand electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive micro-pattern trench-field-stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz.
Electrical Features
Blocking voltage 750 V
Low VCEsat
Low switching losses
Low Qg and crss
Low inductive design Tvj op = 150° C
Short-time extended operation temperature Tvj op = 175°C
Mechanical features
4.2kV DC 1sec insulation
High creepage and clearance distances
Compact design
High power density
Direct cooled pinFin base plate
Guiding elements for PCB and cooler assembly
Integrated NTC temperature sensor
Pressfit contact technology
RoHS compliant
UL 94 V0 module frame
New items
VS-GT100LA65UF, Vishay
The Vishay IGBT module is designed for increased operating efficiency for power conversion in UPS, SMPS, TIG welding and induction heating. It is easy to assemble due to its direct surface mount package. It is plug in compatible with other SOT 227 packages.
Fully isolated package
Very low internal inductance
Industry standard outline
UL approved file E78996
New items
VS-GT90DA60U, Vishay
The Vishay IGBT module is designed for increased operating efficiency for power conversion in UPS, SMPS, TIG welding and induction heating. It is easy to assemble due to its direct surface mount package. It is plug in compatible with other SOT 227 packages.
Fully isolated package
Very low internal inductance
Industry standard outline
UL approved file E78996
New items
IKB15N65EH5ATMA1, Infineon
The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
New items
IRG4PH50UDPBF, Infineon
Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
FAQs
We offer free shipping for orders over £200 if delivery is in the UK. All other orders in the UK, shipping from £7.99 depending on the weight and measurement. Mainland Europe shipping charges start from £25. For all other countries shipping charges start from £50 for products like IGBTs and all others.
You can email us directly at sales@enrgtech.co.uk or via our website for any queries regarding IGBTs or any other product.
This depends on the IGBTs individual product and information that can be found on our website.
Yes, we offer special discounts on orders above £200 for IGBTs and all other products.
UK orders normally take between 2/3 working days. International orders normally take between 3/5 working days for all products including IGBTs.
Yes. We keep updating our stock frequently and if a product like IGBTs is not in stock then we will let you know.