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Showing Results For: IGBT Modules

IGBT Modules


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Infineon Technologies
FS600R07A2E3B32BOSA1, Infineon Technologies
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Microchip Technology
MSCGLQ50X065CTYZBNMG, Microchip Technology
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Vishay General Semiconductor - Diodes Division
GA400TD25S, Vishay General Semiconductor - Diodes Division
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Microchip Technology
MSCGLQ25X120CRTBL3NG, Microchip Technology
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Vishay General Semiconductor - Diodes Division
VS-40MT120UHTAPBF, Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
VS-GA200HS60S1, Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
VS-GA300TD60S, Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
VS-GB150TH120N, Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
VS-GB600AH120N, Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
VS-GB75NA60UF, Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
VS-GB90DA120U, Vishay General Semiconductor - Diodes Division
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Infineon Technologies
FP75R12N2T4B16BOSA1, Infineon Technologies
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Infineon Technologies
FF1000R17IE4DB2S4BOSA2, Infineon Technologies
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Infineon Technologies
FS100R12KT4GPB11BPSA1, Infineon Technologies
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Vishay General Semiconductor - Diodes Division
VS-70MT060WSP, Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
VS-GB55NA120UX, Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
VS-GB75YF120UT, Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
VS-GB100LP120N, Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
VS-GB200TH120N, Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
VS-GB300AH120N, Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
VS-GB300LH120N, Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
VS-25MT060WFAPBF, Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
50MT060WH, Vishay General Semiconductor - Diodes Division
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Microsemi Corporation
APTGT150A60TG, Microsemi Corporation
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Microsemi Corporation
APTGT100A60TG, Microsemi Corporation
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New Items
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NXH80T120L3Q0S3G, onsemi

NXH80T120L3Q0S3G, onsemi

PIM GENERATION3 Q0PACK 1200V, 80
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NXH40B120MNQ1SNG, onsemi
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2MBI1200U4G-120, Fuji Electric

2MBI1200U4G-120, Fuji Electric

IGBT Modules 2-Pack, Fuji Electric V-Series, 6th Generation Field-Stop U/U4 Series, 5th Generation Field-Stop S-Series, 4th Generation NPT IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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IXA70I1200NA, IXYS

IXA70I1200NA, IXYS

IGBT 1200V 100A SOT-227B
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FS200R07A1E3BOSA1, Infineon

FS200R07A1E3BOSA1, Infineon

IGBT Modules, Infineon The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives. Package styles include: 62mm Modules, EasyPACK, EconoPACK TM 2/EconoPACK TM 3/EconoPACK TM 4 IGBT Discretes & Modules, Infineon The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
NXH300B100H4Q2F2SG, onsemi

NXH300B100H4Q2F2SG, onsemi

MASS MARKET 250KW 1500V Q2 3 LEV
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IXA60IF1200NA, IXYS

IXA60IF1200NA, IXYS

IGBT 1200V 88A SOT-227B
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NXH400N100H4Q2F2SG, onsemi

NXH400N100H4Q2F2SG, onsemi

MASS MARKET 250KW 1500V Q2 PACK
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NXH50M65L4C2SG, onsemi

NXH50M65L4C2SG, onsemi

650V 50A CONVERTER-INVERTER-PFCS
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FB20R06W1E3BOMA1, Infineon

FB20R06W1E3BOMA1, Infineon

IGBT Modules, Infineon The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives. Package styles include: 62mm Modules, EasyPACK, EconoPACK TM 2/EconoPACK TM 3/EconoPACK TM 4 IGBT Discretes & Modules, Infineon The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
NXH40B120MNQ0SNG, onsemi

NXH40B120MNQ0SNG, onsemi

80KW GENII 1200V 80MOHM SIC MOSF
New items
2MBi400U4H-120-50, Fuji Electric

2MBi400U4H-120-50, Fuji Electric

IGBT Discretes, Fuji Electric IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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We offer free shipping for orders over £200 if delivery is in the UK. All other orders in the UK, shipping from £7.99 depending on the weight and measurement. Mainland Europe shipping charges start from £25. For all other countries shipping charges start from £50 for products like IGBT Modules and all others.
You can email us directly at sales@enrgtech.co.uk or via our website for any queries regarding IGBT Modules or any other product.
This depends on the IGBT Modules individual product and information that can be found on our website.
Yes, we offer special discounts on orders above £200 for IGBT Modules and all other products.
UK orders normally take between 2/3 working days. International orders normally take between 3/5 working days for all products including IGBT Modules.
Yes. We keep updating our stock frequently and if a product like IGBT Modules is not in stock then we will let you know.