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onsemi NXH100B120H3Q0SG

NXH100B120H3Q0SG onsemi
NXH100B120H3Q0SG
onsemi

Product Information

Maximum Power Dissipation:
186 W
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
2
Maximum Continuous Collector Current:
61 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
Case 180AJ (Pb-Free and Halide-Free) Solder Pins
Current - Collector (Ic) (Max):
61 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Operating Temperature:
-40°C ~ 150°C (TJ)
Input Capacitance (Cies) @ Vce:
9.075 nF @ 20 V
Package / Case:
Module
Input:
Standard
NTC Thermistor:
No
REACH Status:
REACH Unaffected
Configuration:
2 Independent
Package:
Tray
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
11 Weeks
IGBT Type:
Trench Field Stop
Current - Collector Cutoff (Max):
200 µA
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
22-PIM/Q0BOOST (55x32.5)
Power - Max:
186 W
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is NXH100B120H3Q0SG. Provides up to 186 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 2 transistors . The product has a maximum 61 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of case 180aj (pb-free and halide-free) solder pins. The maximum collector current includes 61 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.3v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 1200 v. The product has -40°c ~ 150°c (tj) operating temperature range. It holds 9.075 nf @ 20 v of input capacitance. Moreover, the product comes in module. Its input values include standard. NTC Thermistor - no. In addition, it is reach unaffected. The product is available in 2 independent configuration. It is shipped in tray package . Its typical moisture sensitivity level is not applicable. It has a long 11 weeks standard lead time. Features an IGBT trench field stop type. In addition, 200 µa is the maximum current at collector cutoff. The product is available in chassis mount configuration. 22-pim/q0boost (55x32.5) is the supplier device package value. The maximum power of the product is 186 w. The product is designated with the ear99 code number.

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Datasheet - NXH100B120H3Q0SG(Technical Reference)
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Wafer Fab Change 27/Dec/2022(PCN Assembly/Origin)
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NXH100B120H3Q0, NXH100B120H3Q0PG-R(Datasheets)

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FAQs

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We accept all major payment methods for all products including ET23425093. Please check your shopping cart at the time of order.
You can order onsemi brand products with NXH100B120H3Q0SG directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in IGBT Modules category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi NXH100B120H3Q0SG. You can also check on our website or by contacting our customer support team for further order details on onsemi NXH100B120H3Q0SG.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET23425093 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET23425093.
Yes. We ship NXH100B120H3Q0SG Internationally to many countries around the world.