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Value Pack IGBT Modules - Fast Shipping

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FS150R07PE4BOSA1, Infineon

IGBT Modules, Infineon The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives. Package styles include: 62mm Modules, EasyPACK, EconoPACK TM 2/EconoPACK TM 3/EconoPACK TM 4 IGBT Discretes & Modules, Infineon The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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NXH40B120MNQ1SNG, onsemi

30KW Q1BOOST FULL SIC

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NXH80T120L3Q0S3G, onsemi

PIM GENERATION3 Q0PACK 1200V, 80

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2MBi450VE-120-50, Fuji Electric

IGBT Modules 2-Pack, Fuji Electric V-Series, 6th Generation Field-Stop U/U4 Series, 5th Generation Field-Stop S-Series, 4th Generation NPT IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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New items

2MBI1200U4G-120, Fuji Electric

IGBT Modules 2-Pack, Fuji Electric V-Series, 6th Generation Field-Stop U/U4 Series, 5th Generation Field-Stop S-Series, 4th Generation NPT IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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New items

NXH25C120L2C2SG, onsemi

The ON Semiconductor transfer molded power module containing a converter-inverter-brake circuit consisting of six 25 Ampere and 1600 Volts rectifiers, six 25 Ampere and 1200 Volts IGBTs with inverse diodes, one 25 Ampere and 1200 Volts brake IGBT with brake diode and an NTC thermistor. Low thermal resistance 6mm clearance distance between pin to heatsink Solderable pins Thermistor Pb free Halogen free or BFR free RoHS compliant

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New items

FS200R07A1E3BOSA1, Infineon

IGBT Modules, Infineon The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives. Package styles include: 62mm Modules, EasyPACK, EconoPACK TM 2/EconoPACK TM 3/EconoPACK TM 4 IGBT Discretes & Modules, Infineon The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Product Detail

New items