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onsemi NXH80T120L3Q0S3G

NXH80T120L3Q0S3G onsemi
NXH80T120L3Q0S3G
NXH80T120L3Q0S3G
onsemi

Product Information

Maximum Power Dissipation:
188 W
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
4
Maximum Continuous Collector Current:
75 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
Q0PACK - Case 180AB (Pb-Free and Halide-Free)
Current - Collector (Ic) (Max):
75 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 80A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Operating Temperature:
-40°C ~ 175°C (TJ)
Input Capacitance (Cies) @ Vce:
18.15 nF @ 20 V
Package / Case:
Module
Input:
Standard
NTC Thermistor:
Yes
REACH Status:
REACH Unaffected
Configuration:
Half Bridge
Manufacturer:
onsemi
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
13 Weeks
IGBT Type:
Trench Field Stop
Current - Collector Cutoff (Max):
300 µA
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
20-PIM/Q0PACK (55x32.5)
Packaging:
Tray
Power - Max:
188 W
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is NXH80T120L3Q0S3G. Provides up to 188 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 4 transistors . The product has a maximum 75 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of q0pack - case 180ab (pb-free and halide-free). The maximum collector current includes 75 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.4v @ 15v, 80a. The maximum collector emitter breakdown voltage of the product is 1200 v. The product has -40°c ~ 175°c (tj) operating temperature range. It holds 18.15 nf @ 20 v of input capacitance. Moreover, the product comes in module. Its input values include standard. NTC Thermistor - yes. In addition, it is reach unaffected. The product is available in half bridge configuration. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is not applicable. It has a long 13 weeks standard lead time. Features an IGBT trench field stop type. In addition, 300 µa is the maximum current at collector cutoff. The product is available in chassis mount configuration. 20-pim/q0pack (55x32.5) is the supplier device package value. In addition, tray is the available packaging type of the product. The maximum power of the product is 188 w. The product is designated with the ear99 code number.

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Datasheet - NXH80T120L3Q0S3G(Technical Reference)
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Multi Dev 29/Sep/2022(PCN Assembly/Origin)
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NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G(Datasheets)
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Postponed Qualification 27/Dec/2022(PCN Design/Specification)

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FAQs

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You can order onsemi brand products with NXH80T120L3Q0S3G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
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You will get a confirmation email regarding your order of onsemi NXH80T120L3Q0S3G. You can also check on our website or by contacting our customer support team for further order details on onsemi NXH80T120L3Q0S3G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET23425116 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET23425116.
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