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New items
CY7C1021DV33-10ZSXIT, Infineon
Temperature ranges
Industrial: –40 °C to 85 °C
Automotive-A: –40 °C to 85 °C
Pin-and function-compatible with CY7C1021CV33
High speed
tAA = 10 ns
Low active power
ICC = 60 mA @ 10 ns
Low CMOS standby power
ISB2 = 3 mA
2.0 V data retention
Automatic power-down when deselected
CMOS for optimum speed/power
Independent control of upper and lower bits
Available in Pb-free 44-pin 400-Mil wide molded SOJ, 44-pin TSOP II and 48-ball VFBGA packages
New items
R1LP0108ESA-5SI#B1, Renesas Electronics
Low Power SRAM, R1LP Series, Renesas Electronics
The R1LP Series of advanced low voltage static RAMs is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives.
Single 4.5V to 5.5V power supply
Small stand-by current
No clocks, No refresh required
All inputs and outputs are TTL compatible
SRAM (Static Random Access Memory)
New items
RMLV0816BGSD-4S2#AC0, Renesas Electronics
Low Power SRAM, RMLV Series, Renesas Electronics
The RMLV Series of high performance advanced static RAMs has realized higher density, low current consumption, and offers low power standby power dissipation.
Single 2.7V to 3.6V power supply
Access time: 45ns (max.)
Equal access and cycle times
Common data input and output with three state output
All inputs and outputs are TTL compatible
Suitable for battery backup operation
SRAM (Static Random Access Memory)
New items
CY621472E30LL-45ZSXI, Infineon
Very high speed: 45 ns
Temperature range
Industrial: –40 °C to +85 °C
Wide voltage range: 2.20 V to 3.60 V
Ultra low standby power
Typical standby current: 1 A
Maximum standby current: 7 A (Industrial)
Ultra low active power
Typical active current: 2 mA at f = 1 MHz
Easy memory expansion with CE1, CE2, and OE Features
Automatic power down when deselected
Complementary metal oxide semiconductor (CMOS) for optimum speed and power
Available in Pb-free 44-pin thin small outline package (TSOP) II package
Byte power down feature
New items
CY7C1345G-100AXC, Infineon
The Cypress Semiconductor CY7C1345G series is a 128K
´
36 synchronous cache RAM designed to interface with high speed microprocessors with minimum glue logic. The maximum access delay from clock rise is 8.0 ns. A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access.
Provide high performance 2-1-1-1 access rate
User selectable burst counter supporting Intel Pentium interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self timed write
Asynchronous output enable
Available in Pb-free 100-pin TQFP package
ZZ sleep mode option
New items
CY7C1354C-166AXC, Infineon
The Cypress Semiconductor CY7C1354C series are 3.3V, 256K
´
36 synchronous pipelined burst SRAMs with no bus latency logic, respectively. They are designed to support unlimited true back-to-back read/write operations with no wait states. It is equipped with the advanced logic required to enable consecutive read/write operations with data being transferred on every clock cycle.
Pin-compatible and functionally equivalent to ZBT
Supports 250 MHz bus operations with zero wait states
Available speed grades are 250, 200, and 166 MHz
Internally self-timed output buffer control to eliminate the need to use asynchronous OE
Fully registered for pipelined operation
Byte write capability
New items
CY7C1354C-166AXI, Infineon
The Cypress Semiconductor CY7C1354C series are 3.3V, 256K
´
36 synchronous pipelined burst SRAMs with no bus latency logic, respectively. They are designed to support unlimited true back-to-back read/write operations with no wait states. It is equipped with the advanced logic required to enable consecutive read/write operations with data being transferred on every clock cycle.
Pin-compatible and functionally equivalent to ZBT
Supports 250 MHz bus operations with zero wait states
Available speed grades are 250, 200, and 166 MHz
Internally self-timed output buffer control to eliminate the need to use asynchronous OE
Fully registered for pipelined operation
Byte write capability
New items
CY62137FV30LL-45BVXI, Cypress Semiconductor
Asynchronous Static RAM Memory, Cypress Semiconductor
SRAM (Static Random Access Memory)
New items
IS62WV1288DBLL-45HLI, ISSI
Static RAM, ISSI
The
ISSI
Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asynchronous SRAM, 5V low power types asynchronous SRAMs, ultra-low power CMOS Static RAM and PowerSaver
TM
lower power asynchronous SRAMs. The ISSI SRAM devices come in a variety of voltages, memory size and different organisations. They are suitable in applications such as CPU cache memory, embedded processors, hard drive, and switches to industrial electronics.
Power supply: 1.8V/3.3V/5V
Packages available: BGA, SOJ, SOP, sTSOP, TSOP
Configuration choice available: x8 and x16
ECC feature available for High Speed Asynchronous SRAMs
SRAM (Static Random Access Memory)
New items
CY7C1021DV33-10ZSXI, Infineon
The Infineon Static RAM is a high performance CMOS static RAM organized as 65536 words by 16 bits. This device has an automatic power down feature that significantly reduces power consumption when deselected.
High speed
Low CMOS standby power
CMOS for optimum speed and power
Automatic power down when deselected
Independent control of upper and lower bits
New items
R1LV0108ESA-5SI#B1, Renesas Electronics
Low Power SRAM, R1LV Series, Renesas Electronics
The R1LV Series of advanced low voltage static RAMs is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives.
Single 2.7V to 3.6V power supply
Small stand-by current
No clocks, No refresh required
All inputs and outputs are TTL compatible
Three-state outputs: OR-tie Capability
SRAM (Static Random Access Memory)