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Get Upgraded Versions Of Flash Memory

New items

S29GL064N90TFI070, Cypress Semiconductor

Flash Memory using MirrorBit Technology, Cypress Semiconductor (Spansion) Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.

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VA001-16G, Okdo

16GB Plug on eMMC 5.1 flash storage module for ROCK single board computers. Benefits of the eMMC flash storage module for ROCK Ideal memory solution for ROCK single board computers - eMMC modules benefit from fast speeds and supreme power efficiency. Its the perfect memory and storage solution for a huge range of electronics. Not just for ROCK - This eMMC 5.1 module is optimised for use with ROCK single board computers, but it is also compatible with ODroid, and PINE. A memory size to suit you - We also offer eMMC 5.1 modules in 32GB, 64GB, or 128GB.

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SST39LF800A-55-4C-B3KE, Microchip

SST39LF800A Parallel SuperFlash® Memory Flash Memory, Microchip

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S25FL128LAGNFM010, Infineon

The Infineon Flash Memory offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. It provides an ideal storage solution for systems with limited space, signal connections and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM, executing code directly and storing reprogrammable data. Pb free package Double data rate option Quad peripheral interface option Minimum 20 year data retention Clock polarity and phase modes 0 and 3 Minimum 100000 program and erase cycles

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S25FL256LAGNFV010, Infineon

The Infineon Flash Memory offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. It provides an ideal storage solution for systems with limited space, signal connections and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM, executing code directly and storing reprogrammable data. Pb free package Double data rate option Quad peripheral interface option Minimum 20 year data retention Clock polarity and phase modes 0 and 3 Minimum 100000 program and erase cycles

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S25FL512SAGBHIA13, Infineon

The Infineon Flash Memory offers high densities coupled with the flexibility and fast performance required by a variety of embedded applications. It is ideal for code shadowing, XIP, and data storage. Executing code directly from flash memory is often called Execute in Place or XIP. By using FL S devices at the higher clock rates supported, with QIO or DDR QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. Pb free package SPI with multi IO Advance sector protection Minimum 20 year data retention CMOS 3.0 V core with versatile IO Minimum 100000 program and erase cycles

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S29AL008J70TFI010, Cypress Semiconductor

Parallel NOR Flash Memory, Cypress Semiconductor High performance Fast random-access and high bandwidth Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.

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S26HS512TGABHI010, Cypress Semiconductor

Cypress NOR Flash Memory is a non-volatile storage solution that integrates safety features for automotive and industrial systems. Applications include automotive instrument clusters, advanced driver assistance systems (ADAS), and networking communications. EnduraFlex™ Architecture: Partition memory to provide up to 25-years data retention and 1+ million program/erase cycles endurance, JEDEC xSPI compatible, Data Integrity Check and Interface CRC Certificates: ISO 26262 ASIL B Compliant, ISO 26262 ASIL-D ready. FMEDA and safety manual Single error correction and double error detection (SECDED) SafeBoot

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W25Q64JVZPIQ/TUBE, Winbond

64M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI Single/Dual/Quad SPI operations Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 32,768 pages (256 bytes), page program in 0.7mS (typ.) Continuous Read with 8/16/32/64 Byte Wrap Clock operation up to 104MHz (266/532MHz equivalent with Dual/Quad SPI) 2.7 to 3.6V power supply -40° to +85°C operating range Program/Erase Suspend/Resume, Suspend Status Bit Factory-programmed unique ID Electronic ID with Dual/Quad I/O, Hardware and software write protection for top or bottom blocks Volatile & Non-volatile Status Register Bits Lock-Down and OTP protection Serial Flash Discoverable Parameters(SFDP) 3X256byte Security Registers with OTP locks Complement Array Protection Bit Individual Block/Sector Write Protection Software Reset & Configurable hardware/RESET pin Programmable output driver strength

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SST39SF040-55-4I-NHE, Microchip

SST39SF010A/020A/040 Parallel SuperFlash® Memory The SST39SF010A/020A/040 family of devices from Microchip are Parallel multi-purpose SuperFlash® Memory ICs. Features 4.5-5.5V Read and Write Operations Endurance – 100,000 cycles (typical) Low Power Consumption - Active Current 10 mA, Standby Current 30 μA (typical values at 14 MHz) Sector-Erase Capability – Uniform 4 Kbyte sectors Read Access Time – 55 to 70 ns Sector-Erase Time 18 ms Chip-Erase Time: 70 ms (typical) Byte-Program Time – 14 μs (typical) Chip Rewrite Time – SST39SF010A 2 seconds, SST39SF020A 4 seconds, SST39SF040 8 seconds (typical values) Latched Address and Data Automatic Write Timing – Internal VPP Generation End-of-Write Detection – Toggle Bit – Data# Polling TTL I/O Compatibility JEDEC Standard– Flash EEPROM Pinouts and Command Sets Flash Memory, Microchip

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S25HS512TFABHI010, Infineon

Cypress NOR Flash Memory is a non-volatile storage solution that integrates safety features for automotive and industrial systems. Applications include automotive instrument clusters, advanced driver assistance systems (ADAS), and networking communications. EnduraFlex™ Architecture: Partition memory to provide up to 25-years data retention and 1+ million program/erase cycles endurance, JEDEC xSPI compatible, Data Integrity Check and Interface CRC Certificates: ISO 26262 ASIL B Compliant, ISO 26262 ASIL-D ready. FMEDA and safety manual Single error correction and double error detection (SECDED) SafeBoot

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S29GL256S10TFIV20, Infineon

CMOS 3.0 Volt Core with Versatile I/O 65 nm MirrorBit Eclipse Technology Single supply (VCC) for read / program / erase (2.7 V to 3.6 V) Versatile I/O Feature Wide I/O voltage range (VIO): 1.65 V to VCC ´ 16 data bus Asynchronous 32-byte Page read 512-byte Programming Buffer Programming in Page multiples, up to a maximum of 512 bytes Single word and multiple program on same word options Automatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correction Sector Erase Uniform 128-kbyte sectors Suspend and Resume commands for Program and Erase operations Status Register, Data Polling, and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP) Volatile and non-volatile protection methods for each sector Separate 1024-byte One Time Program (OTP) array with two lockable regions Common Flash Interface (CFI) parameter table Temperature Range / Grade Industrial (-40°C to +85°C) Industrial Plus(-40°C to +105°C) 100,000 Program / Erase Cycles 20 Years Data Retention Packaging Options 56-pin TSOP 64-ball LAA Fortified BGA, 13 mm ´ 11 mm 64-ball LAE Fortified BGA, 9 mm ´ 9 mm 56-ball VBU Fortified BGA, 9 mm ´ 7 mm

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