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Get Upgraded Versions Of Flash Memory

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S29AL008J70TFI010, Cypress Semiconductor

Parallel NOR Flash Memory, Cypress Semiconductor High performance Fast random-access and high bandwidth Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.

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S25HS512TFABHI010, Infineon

Cypress NOR Flash Memory is a non-volatile storage solution that integrates safety features for automotive and industrial systems. Applications include automotive instrument clusters, advanced driver assistance systems (ADAS), and networking communications. EnduraFlex™ Architecture: Partition memory to provide up to 25-years data retention and 1+ million program/erase cycles endurance, JEDEC xSPI compatible, Data Integrity Check and Interface CRC Certificates: ISO 26262 ASIL B Compliant, ISO 26262 ASIL-D ready. FMEDA and safety manual Single error correction and double error detection (SECDED) SafeBoot

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S29GL256S10TFIV20, Infineon

CMOS 3.0 Volt Core with Versatile I/O 65 nm MirrorBit Eclipse Technology Single supply (VCC) for read / program / erase (2.7 V to 3.6 V) Versatile I/O Feature Wide I/O voltage range (VIO): 1.65 V to VCC ´ 16 data bus Asynchronous 32-byte Page read 512-byte Programming Buffer Programming in Page multiples, up to a maximum of 512 bytes Single word and multiple program on same word options Automatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correction Sector Erase Uniform 128-kbyte sectors Suspend and Resume commands for Program and Erase operations Status Register, Data Polling, and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP) Volatile and non-volatile protection methods for each sector Separate 1024-byte One Time Program (OTP) array with two lockable regions Common Flash Interface (CFI) parameter table Temperature Range / Grade Industrial (-40°C to +85°C) Industrial Plus(-40°C to +105°C) 100,000 Program / Erase Cycles 20 Years Data Retention Packaging Options 56-pin TSOP 64-ball LAA Fortified BGA, 13 mm ´ 11 mm 64-ball LAE Fortified BGA, 9 mm ´ 9 mm 56-ball VBU Fortified BGA, 9 mm ´ 7 mm

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W25X10CLSNIG, Winbond

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SST39SF040-55-4I-NHE, Microchip

SST39SF010A/020A/040 Parallel SuperFlash® Memory The SST39SF010A/020A/040 family of devices from Microchip are Parallel multi-purpose SuperFlash® Memory ICs. Features 4.5-5.5V Read and Write Operations Endurance – 100,000 cycles (typical) Low Power Consumption - Active Current 10 mA, Standby Current 30 μA (typical values at 14 MHz) Sector-Erase Capability – Uniform 4 Kbyte sectors Read Access Time – 55 to 70 ns Sector-Erase Time 18 ms Chip-Erase Time: 70 ms (typical) Byte-Program Time – 14 μs (typical) Chip Rewrite Time – SST39SF010A 2 seconds, SST39SF020A 4 seconds, SST39SF040 8 seconds (typical values) Latched Address and Data Automatic Write Timing – Internal VPP Generation End-of-Write Detection – Toggle Bit – Data# Polling TTL I/O Compatibility JEDEC Standard– Flash EEPROM Pinouts and Command Sets Flash Memory, Microchip

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S26HS512TGABHI010, Cypress Semiconductor

Cypress NOR Flash Memory is a non-volatile storage solution that integrates safety features for automotive and industrial systems. Applications include automotive instrument clusters, advanced driver assistance systems (ADAS), and networking communications. EnduraFlex™ Architecture: Partition memory to provide up to 25-years data retention and 1+ million program/erase cycles endurance, JEDEC xSPI compatible, Data Integrity Check and Interface CRC Certificates: ISO 26262 ASIL B Compliant, ISO 26262 ASIL-D ready. FMEDA and safety manual Single error correction and double error detection (SECDED) SafeBoot

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S25FL256SAGBHI300, Infineon

The Infineon Flash Memory offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. It is ideal for code shadowing, XIP, and data storage. Executing code directly from flash memory is often called execute in Place or XIP. By using FL-S devices at the higher clock rates supported, with QIO or DDR QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. Advanced sector protection CMOS 3.0 V core with versatile I/O Minimum 20 year data retention Minimum 100000 program erase cycles SPI clock polarity and phase modes 0 and 3

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SST26VF020A-104I/SN, Microchip

The Microchip serial quad I/O (SQI) flash device utilizes a 4-bit multiplexed I/O serial interface to boost performance while maintaining the compact form factor of standard serial flash devices. It also supports full command-set compatibility to traditional serial peripheral interface (SPI) protocol. Operating at frequencies reaching 104 MHz, the SST26VF020A enables minimum latency execute-in-place (XIP) capability without the need for code shadowing on an SRAM. The devices high performance and reliability make it the ideal choice for network appliance, smart home, wireless connectivity, computing, digital TV, smart meter, datacentre, automotive and other industrial applications. Further benefits are achieved with SSTs proprietary, high-performance CMOS Super flash® technology, which significantly improves performance and reliability, and lowers power consumption for high bandwidth, compact designs. x1/x2/x4 Serial Peripheral Interface (SPI) Protocol and SQI protocol Burst Modes- Continuous linear burst, 8/16/32/64 Byte linear burst with wrap-around Page-Program- 256 Bytes per page in x1 or x4 mode SFDP (Serial flash Discoverable Parameters) RoHS compliant -40°C to +85°C industrial temperature range

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S25FL128LAGMFI001, Cypress Semiconductor

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SST39VF3201B-70-4C-EKE, Microchip

SST39VF3201/3202 Parallel SuperFlash® Memory Flash Memory, Microchip

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SST25VF016B-50-4I-QAF, Microchip

SST25VF016B Serial SPI SuperFlash® Memory Flash Memory, Microchip

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SST26VF016B-104V/SN, Microchip

SST26VF016B/032B/064B Serial Quad I/O (SQI) SuperFlash® Memory The SST26VF016B/032B/064B family of devices from Microchip are Serial Quad I/O™ (SQI™) interface SuperFlash® memory ICs featuring a six-wire, 4-bit I/O interface that allow for low power, high performance operation in a compact low pin-count package. The use of Microchips SQI™ interface results in performance of up to 104 MHz and enables low-latency execute-in-place (XIP) capability with minimal processor buffer memory. These flash memory chips also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol. Through the use of SuperFlash® technology these devices offer exceptional erase times that compare very favourably to other Flash memory alternatives. Sector and block erase commands are typically completed in 18 ms, full chip erase operation taking a typical 35 ms. Features Serial Interface Architecture – Nibble-Wide Multiplexed I/Os with SPI-like Serial Command Structure x1/x2/x4 Serial Peripheral Interface (SPI) Protocol High Speed Clock Frequency- 104 MHz Max Burst Modes Low Power Consumption – Active Read 15 mA (Typical at 104 MHz), Standby 15 μA (Typical) Fast Erase Time - Sector/Block Erase: 18 ms (Typical); Chip Erase 35 ms (Typical) Flexible Erase Capability Software Write Protection Flash Memory, Microchip

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